Enhanced Dynamic Annealing in Ga+ ion-implanted GaN Nanowires

S. Dhara; A. Datta; C.-T. Wu; Z.-H. Lan; K.-H. Chen; Y.-L. Wang; L.-C. Chen; C.-W. Hsu; H.-M. Lin; Chia-Chun Chen

Enhanced Dynamic Annealing in Ga+ ion-implanted GaN Nanowires

Date

2003-01-20

Authors

S. Dhara

A. Datta

C.-T. Wu

Z.-H. Lan

K.-H. Chen

Y.-L. Wang

L.-C. Chen

C.-W. Hsu

H.-M. Lin

Chia-Chun Chen

Publisher

American Institute of Physics(AIP) Publishing

Abstract

Ga+ion implantation of chemical-vapor-deposited GaNnanowires (NWs) is studied using a 50-keV Ga+focused ion beam. The role of dynamic annealing (defect-annihilation) is discussed with an emphasis on the fluence-dependent defect structure. Unlike heavy-ion-irradiated epitaxialGaN film, large-scale amorphization is suppressed until a very high fluence of 2×1016 ions cm−2. In contrast to extended-defects as reported for heavy-ion-irradiated epitaxialGaN film, point-defect clusters are identified as major component in irradiated NWs. Enhanced dynamic annealing induced by high diffusivity of mobile point-defects in the confined geometry of NWs is identified as the probable reason for observed differences.