Enhanced Dynamic Annealing in Ga+ ion-implanted GaN Nanowires
| dc.contributor | 國立臺灣師範大學化學系 | zh_tw |
| dc.contributor.author | S. Dhara | en_US |
| dc.contributor.author | A. Datta | en_US |
| dc.contributor.author | C.-T. Wu | en_US |
| dc.contributor.author | Z.-H. Lan | en_US |
| dc.contributor.author | K.-H. Chen | en_US |
| dc.contributor.author | Y.-L. Wang | en_US |
| dc.contributor.author | L.-C. Chen | en_US |
| dc.contributor.author | C.-W. Hsu | en_US |
| dc.contributor.author | H.-M. Lin | en_US |
| dc.contributor.author | Chia-Chun Chen | en_US |
| dc.date.accessioned | 2014-12-02T06:41:30Z | |
| dc.date.available | 2014-12-02T06:41:30Z | |
| dc.date.issued | 2003-01-20 | zh_TW |
| dc.description.abstract | Ga+ion implantation of chemical-vapor-deposited GaNnanowires (NWs) is studied using a 50-keV Ga+focused ion beam. The role of dynamic annealing (defect-annihilation) is discussed with an emphasis on the fluence-dependent defect structure. Unlike heavy-ion-irradiated epitaxialGaN film, large-scale amorphization is suppressed until a very high fluence of 2×1016 ions cm−2. In contrast to extended-defects as reported for heavy-ion-irradiated epitaxialGaN film, point-defect clusters are identified as major component in irradiated NWs. Enhanced dynamic annealing induced by high diffusivity of mobile point-defects in the confined geometry of NWs is identified as the probable reason for observed differences. | en_US |
| dc.description.uri | http://scitation.aip.org/docserver/fulltext/aip/journal/apl/82/3/1.1536250.pdf?expires=1395214475&id=id&accname=424340&checksum=10457639CBF7FF76C1E866A965BCD40D | zh_TW |
| dc.identifier | ntnulib_tp_C0301_01_017 | zh_TW |
| dc.identifier.issn | 0003-6951 | zh_TW |
| dc.identifier.uri | http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42301 | |
| dc.language | en_US | zh_TW |
| dc.publisher | American Institute of Physics(AIP) Publishing | en_US |
| dc.relation | Applied Physics Letters, 82(3), 451-453. | en_US |
| dc.relation.uri | http://dx.doi.org/10.1063/1.1536250 | zh_TW |
| dc.title | Enhanced Dynamic Annealing in Ga+ ion-implanted GaN Nanowires | en_US |