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Title: Enhanced Dynamic Annealing in Ga+ ion-implanted GaN Nanowires
Authors: 國立臺灣師範大學化學系
S. Dhara
A. Datta
C.-T. Wu
Z.-H. Lan
K.-H. Chen
Y.-L. Wang
L.-C. Chen
C.-W. Hsu
H.-M. Lin
Chia-Chun Chen
Issue Date: 20-Jan-2003
Publisher: American Institute of Physics(AIP) Publishing
Abstract: Ga+ion implantation of chemical-vapor-deposited GaNnanowires (NWs) is studied using a 50-keV Ga+focused ion beam. The role of dynamic annealing (defect-annihilation) is discussed with an emphasis on the fluence-dependent defect structure. Unlike heavy-ion-irradiated epitaxialGaN film, large-scale amorphization is suppressed until a very high fluence of 2×1016 ions cm−2. In contrast to extended-defects as reported for heavy-ion-irradiated epitaxialGaN film, point-defect clusters are identified as major component in irradiated NWs. Enhanced dynamic annealing induced by high diffusivity of mobile point-defects in the confined geometry of NWs is identified as the probable reason for observed differences.
ISSN: 0003-6951
Other Identifiers: ntnulib_tp_C0301_01_017
Appears in Collections:教師著作

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