Correlated Electric Fluctuations in GaN Nanowire Devices
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Date
2009-02-01
Authors
L.-C. Li
S.-Y. Huang
J.-A. Wei
Y.-W. Suen
M.-W. Lee
W.-H. Hsieh
T.-W. Liu
Chia-Chun Chen
Journal Title
Journal ISSN
Volume Title
Publisher
American Scientific Publishers
Abstract
We report an experimental study on the correlation spectrums between different sections of a multi-contact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.