Correlated Electric Fluctuations in GaN Nanowire Devices

dc.contributor國立臺灣師範大學化學系zh_tw
dc.contributor.authorL.-C. Lien_US
dc.contributor.authorS.-Y. Huangen_US
dc.contributor.authorJ.-A. Weien_US
dc.contributor.authorY.-W. Suenen_US
dc.contributor.authorM.-W. Leeen_US
dc.contributor.authorW.-H. Hsiehen_US
dc.contributor.authorT.-W. Liuen_US
dc.contributor.authorChia-Chun Chenen_US
dc.date.accessioned2014-12-02T06:41:35Z
dc.date.available2014-12-02T06:41:35Z
dc.date.issued2009-02-01zh_TW
dc.description.abstractWe report an experimental study on the correlation spectrums between different sections of a multi-contact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.en_US
dc.identifierntnulib_tp_C0301_01_055zh_TW
dc.identifier.issn1533-4880zh_TW
dc.identifier.urihttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42339
dc.languageen_USzh_TW
dc.publisherAmerican Scientific Publishersen_US
dc.relationJournal of Nanoscience and Nanotechnology, 9(2), 1000-1003.en_US
dc.relation.urittp://dx.doi.org/10.1166/jnn.2009.C072zh_TW
dc.subject.otherCORRELATIONen_US
dc.subject.otherCROSS SPECTRUMen_US
dc.subject.otherELECTRIC FLUCTUATIONen_US
dc.subject.otherGAN NANOWIREen_US
dc.subject.otherLOW-FREQUENCY EXCESS NOISEen_US
dc.subject.otherNOISEen_US
dc.titleCorrelated Electric Fluctuations in GaN Nanowire Devicesen_US

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