Correlated Electric Fluctuations in GaN Nanowire Devices
| dc.contributor | 國立臺灣師範大學化學系 | zh_tw |
| dc.contributor.author | L.-C. Li | en_US |
| dc.contributor.author | S.-Y. Huang | en_US |
| dc.contributor.author | J.-A. Wei | en_US |
| dc.contributor.author | Y.-W. Suen | en_US |
| dc.contributor.author | M.-W. Lee | en_US |
| dc.contributor.author | W.-H. Hsieh | en_US |
| dc.contributor.author | T.-W. Liu | en_US |
| dc.contributor.author | Chia-Chun Chen | en_US |
| dc.date.accessioned | 2014-12-02T06:41:35Z | |
| dc.date.available | 2014-12-02T06:41:35Z | |
| dc.date.issued | 2009-02-01 | zh_TW |
| dc.description.abstract | We report an experimental study on the correlation spectrums between different sections of a multi-contact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area. | en_US |
| dc.identifier | ntnulib_tp_C0301_01_055 | zh_TW |
| dc.identifier.issn | 1533-4880 | zh_TW |
| dc.identifier.uri | http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42339 | |
| dc.language | en_US | zh_TW |
| dc.publisher | American Scientific Publishers | en_US |
| dc.relation | Journal of Nanoscience and Nanotechnology, 9(2), 1000-1003. | en_US |
| dc.relation.uri | ttp://dx.doi.org/10.1166/jnn.2009.C072 | zh_TW |
| dc.subject.other | CORRELATION | en_US |
| dc.subject.other | CROSS SPECTRUM | en_US |
| dc.subject.other | ELECTRIC FLUCTUATION | en_US |
| dc.subject.other | GAN NANOWIRE | en_US |
| dc.subject.other | LOW-FREQUENCY EXCESS NOISE | en_US |
| dc.subject.other | NOISE | en_US |
| dc.title | Correlated Electric Fluctuations in GaN Nanowire Devices | en_US |