On-chip Fabrication of Well-aligned and Contact-barrier-free GaN Nanobridge Devices with Ultrahigh Photocurrent Responsivity

R.-S. Chen; S.-W. Wang; Z.-H. Lan; J. T.-H. Tsai; C.-T. Wu; L.-C. Chen; K.-H. Chen; Y.-S. Huang; Chia-Chun Chen

On-chip Fabrication of Well-aligned and Contact-barrier-free GaN Nanobridge Devices with Ultrahigh Photocurrent Responsivity

Date

2008-07-01

Authors

R.-S. Chen

S.-W. Wang

Z.-H. Lan

J. T.-H. Tsai

C.-T. Wu

L.-C. Chen

K.-H. Chen

Y.-S. Huang

Chia-Chun Chen

Publisher

Wiley-VCH Verlag

Abstract

Building nanobridges: Direct integration of an ensemble of GaN nanowires (n) onto a microchip produces a viable nanobridge (NB) device with good alignment and contact performance, the design of which demonstrates the potential of nanowires for sensor development. These GaN NBs have strong surface-enhanced photoconductivity with ultrahigh responsivity