On-chip Fabrication of Well-aligned and Contact-barrier-free GaN Nanobridge Devices with Ultrahigh Photocurrent Responsivity

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dc.contributor國立臺灣師範大學化學系zh_tw
dc.contributor.authorR.-S. Chenen_US
dc.contributor.authorS.-W. Wangen_US
dc.contributor.authorZ.-H. Lanen_US
dc.contributor.authorJ. T.-H. Tsaien_US
dc.contributor.authorC.-T. Wuen_US
dc.contributor.authorL.-C. Chenen_US
dc.contributor.authorK.-H. Chenen_US
dc.contributor.authorY.-S. Huangen_US
dc.contributor.authorChia-Chun Chenen_US
dc.date.accessioned2014-12-02T06:41:35Z
dc.date.available2014-12-02T06:41:35Z
dc.date.issued2008-07-01zh_TW
dc.description.abstractBuilding nanobridges: Direct integration of an ensemble of GaN nanowires (n) onto a microchip produces a viable nanobridge (NB) device with good alignment and contact performance, the design of which demonstrates the potential of nanowires for sensor development. These GaN NBs have strong surface-enhanced photoconductivity with ultrahigh responsivityen_US
dc.description.urihttp://www.chem.ntnu.edu.tw/~ccc/pub_issues/63-2008-Smll-4-7.pdfzh_TW
dc.identifierntnulib_tp_C0301_01_053zh_TW
dc.identifier.issn1613-6810zh_TW
dc.identifier.urihttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42337
dc.languageen_USzh_TW
dc.publisherWiley-VCH Verlagen_US
dc.relationSmall, 4(7), 925-929.en_US
dc.relation.urihttp://dx.doi.org/10.1002/smll.200701184zh_TW
dc.subject.othergallium nitrideen_US
dc.subject.othernanobridgesen_US
dc.subject.othernanowiresen_US
dc.subject.otherphotoconductivityen_US
dc.subject.otherresponsivityen_US
dc.titleOn-chip Fabrication of Well-aligned and Contact-barrier-free GaN Nanobridge Devices with Ultrahigh Photocurrent Responsivityen_US

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