導電高分子與氮化鎵奈米線應用於光伏效應之研究
Abstract
我們企圖使用奈米管、奈米線或是奈米柱和共軛高分子混摻用來製作有機/無機混摻太陽能電池藉以提高電子在材料上的遷移率及電荷收集效率。我們將Thermal-CVD成長的氮化鎵奈米線和具規則性的聚3-己烷噻吩(P3HT)混摻置成薄膜，從拉曼光譜中我們看見氮化鎵奈米線和聚3-己烷噻吩 (P3HT) 在表面上可能有作用而使得聚3-己烷噻吩(P3HT)的特徵峰值及強度改變，另外在室溫的光激螢光光譜中可以看峰值紅移，可能是因為氮化鎵奈米線表面的孤對電子推擠聚3-己烷噻吩(P3HT)上的π電子及硫上的孤對電子造成聚3-己烷噻吩(P3HT)的排列較鬆散所致。我們設計氮化鎵奈米線混摻聚3-己烷噻吩(P3HT)的有機/無機太陽能電池其元件表現會受到濃度、膜厚及退火等影響，目前效率大約0.015%、開路電壓約為950mV、短路電流約為0.05 mA/cm2。
The nanorods, nanowire, nanotube and nanotips are mixed with the conjugated polymer to fabricate the organic-inorganic polymer solar cell in order to improve the carrier mobility and collection efficiency. The n-type GaN nanowires grown by thermal-CVD enveloped by a thin layer of the regioregular poly(3-hexylthiophene) (rrP3HT). Raman studies several the characteristics of GaN nanowires and rrP3HT with surface interaction. The room temperature PL spectrum displays redshift caused by that GaN nanowires make stacking loose of rrP3HT. The GaN nanowires/rrP3HT hybrid solar cell was fabricated with the efficiency around 0.015%, Voc ~950 mV and Jsc ~0.05 mA/cm2. The device performance is affected by the GaN nanowires’ concentration, active layer thickness and annealing process.
The nanorods, nanowire, nanotube and nanotips are mixed with the conjugated polymer to fabricate the organic-inorganic polymer solar cell in order to improve the carrier mobility and collection efficiency. The n-type GaN nanowires grown by thermal-CVD enveloped by a thin layer of the regioregular poly(3-hexylthiophene) (rrP3HT). Raman studies several the characteristics of GaN nanowires and rrP3HT with surface interaction. The room temperature PL spectrum displays redshift caused by that GaN nanowires make stacking loose of rrP3HT. The GaN nanowires/rrP3HT hybrid solar cell was fabricated with the efficiency around 0.015%, Voc ~950 mV and Jsc ~0.05 mA/cm2. The device performance is affected by the GaN nanowires’ concentration, active layer thickness and annealing process.
Description
Keywords
氮化鎵, 太陽能電池, 奈米線