新穎化學氣相沉積石墨烯轉印技術之開發
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2012
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石墨烯為碳原子彼此以sp2混成軌域組成單原子層厚度的二維材料,具備了良好的透光度、化學穩定性、低片電阻、理想的功函數、高機械強度及低成本。近年來,在製備及轉印石墨烯方法有很多種,主要都是針對如何增進石墨烯的品質及改善轉印造成的缺陷,使其在提升光電元件上之應用性。此研究主要致力於單層石墨烯轉印技術上的改善,因石墨烯轉印至基板的優劣通常直接影響了光電元件的表現。
本實驗使用化學氣相沉積法,以銅箔當金屬催化層,成長高品質的單層石墨烯,我們研發出二種新型轉印方法有別於傳統之轉印方法,有效的改善CVD石墨烯在矽基板及塑膠基板上的品質。第一種:我們結合了最常見的PMMA法及Roll-to-roll法,此方法不但保有PMMA法轉印後石墨烯的高品質、低電阻的優點,同時還能利用Roll-to-roll法免除石墨烯與基板在水溶液中撈取的問題,此單層石墨烯在塑膠基板上的片電阻約為400Ω⁄sq,2D band半高寬約為36cm-1,I_G⁄I_2D ≅0.62。第二種:因為目前各種轉印方法,都需憑藉有機物的支撐,才能將石墨烯從銅箔上轉印至基板,而此方法則不需任何有機物的支撐,我們單純以物理吸附的現象,利用靜電吸引力的方式,將銅箔上的石墨烯以靜電力吸附至基板上進行轉印,毋殘留有機物,達到一個高品質且乾淨的石墨烯,此單層石墨烯在塑膠基板上的片電阻約為500Ω⁄sq,2D band半高寬約為35cm-1,I_G⁄I_2D ≅0.66。預期這兩種簡單、快速的石墨烯轉印方式,能有效地提升光電元件效益。
Graphene is a 2D-planner material composed of carbon with one-atom-thick. Such properties include excellent electronic transport performance, ultrahigh mechanical strength, a favorable work-function , high conductivity and optical transparency, and low cost fabrication. Recently, many kinds of graphene transfer methods have been developed on the basis of improving the graphene quality and decreasing the defect during the transfer process. In this study, two new transferred processes were developed to improve the transfer quality of CVD graphene on the SiO2/Si and PET substrates. In the thesis, high quality monolayer graphene was grown on Cu foil as the metal catalyst by using utilized chemical vapor deposition. First new transfer process is integration of the PMMA and Roll-to-roll methods. This process not only maintains the high quality and low resistance of grapheme transferred by PMMA method but also avoid the transfer problem of graphene in the solution by roll-to-roll method. On the PET substrate, the sheet resistance, fwhm of 2D band and I_G⁄I_2D ratio is about 400Ω⁄sq, 36cm-1 and 0.62. Second, we utilize a simple physical phenomenon “electrostatic” to transfer CVD graphene without any organic support or contact. By using electrostatic transfer, CVD graphene can be transferred on any substrate with buildup of charges. On the PET substrate, the sheet resistance, fwhm of 2D band and I_G⁄I_2D ratio is about 500Ω⁄sq, 35cm-1 and 0.66. Finally, we expect that these new simple and rapid transferred methods can improve an electronic performance of the monolayer graphene for future optoelectronic applications.
Graphene is a 2D-planner material composed of carbon with one-atom-thick. Such properties include excellent electronic transport performance, ultrahigh mechanical strength, a favorable work-function , high conductivity and optical transparency, and low cost fabrication. Recently, many kinds of graphene transfer methods have been developed on the basis of improving the graphene quality and decreasing the defect during the transfer process. In this study, two new transferred processes were developed to improve the transfer quality of CVD graphene on the SiO2/Si and PET substrates. In the thesis, high quality monolayer graphene was grown on Cu foil as the metal catalyst by using utilized chemical vapor deposition. First new transfer process is integration of the PMMA and Roll-to-roll methods. This process not only maintains the high quality and low resistance of grapheme transferred by PMMA method but also avoid the transfer problem of graphene in the solution by roll-to-roll method. On the PET substrate, the sheet resistance, fwhm of 2D band and I_G⁄I_2D ratio is about 400Ω⁄sq, 36cm-1 and 0.62. Second, we utilize a simple physical phenomenon “electrostatic” to transfer CVD graphene without any organic support or contact. By using electrostatic transfer, CVD graphene can be transferred on any substrate with buildup of charges. On the PET substrate, the sheet resistance, fwhm of 2D band and I_G⁄I_2D ratio is about 500Ω⁄sq, 35cm-1 and 0.66. Finally, we expect that these new simple and rapid transferred methods can improve an electronic performance of the monolayer graphene for future optoelectronic applications.
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Keywords
石墨烯, 轉印技術, 片電阻, Graphene, Transfer, Sheet resistance