以3,7-Dibenzothiophene-S,S-dioxide建構的電激發光材料
Abstract
本論文利用Stille coupling、Buchwald-Hartwig coupling、及Suzuki coupling等反應，合成出一係列以3,7-dibromodibenzothiophene- S,S-dioxide建構之有機電激發光材料，其螢光光色從藍到橘紅。此系列化合物具有好的熱穩定性其玻璃轉換溫度（Tg）介於112–207 oC及熱裂解溫度（Td）介於299–505 oC。與異構化合物2,8-disubstituted dibenzothiophene-S,S-dioxide衍生物相較，本系列化合物的兩個取代基有較佳的共軛。利用蒸鍍法將本系列化合物製成三種電激發光元件： (device I) 作為電洞傳輸兼發光層，ITO/cpd/TPBI/LiF/Al； (device II) 作為電子傳輸兼發光層，ITO/NPB/cpd/ LiF/Al； (device II) 作為電子、電洞傳輸兼發光層，ITO/cpd/LiF/Al（device III）(cpd = SOO-1, SOO-2, SOO-3, SOO-4, SOO-8 )。其中以SOO-3在device II及device III表現較亮眼，在device II中，元件最大效率可達3.09%，最大亮度為20681 cd/m2，而電流密度100 mA/cm2時，其效率為ext 2.05%；device III中，元件最大效率可達1.69%，最大亮度為15717 cd/m2，而電流密度100 mA/cm2時，其效率為ext 1.29%。利用旋轉塗佈法製成元件，結構為ITO/PEDOT:PSS/PVK + cpd (20 wt%)/BCP (10 nm)/TPBI (40nm)/ LiF (1 nm)/Al (120 nm) (cpd = SOO-5, SOO-6, SOO-7 )。其元件表現以SOO-6最佳，元件最大效率可達3.42%，最大亮度為8063 cd/m2，而電流密度100 mA/cm2時，其效率為ext 1.16%。元件結構為ITO/ ployfluorene + cpd (20 wt. %)/TPBI/LiF/Al (cpd = SOO-9, SOO-10)，最值得關注的是SOO-10 CIE座標落在(0.35, 0.33)，接近純白的光色。
Abstract A series of materials derived from 3,7-disubstituted dibenzothiophene- S,S-dioxide for electroluminescent devices have been synthesized by Stille coupling, Buchwald-Hartwig coupling, and Suzuki coupling reactions. The fluorescence colors of these compounds can be tuned from blue to orange-red. These dibenzothiophene derivatives show good thermal stabilities: the glass transition temperatures (Tg) range from 112 to 207 ℃ and high thermal decomposition temperature range from 299 to 505 ℃. Compare to 2,8-disubstituted congeners of dibenzothiophene- S,S-dioxide, the two substituents in these compounds have better electronic communication. Three types of electroluminescent devices were fabricated by using vacuum deposition: ITO/cpd/TPBI/LiF/Al (device I), ITO/NPB/cpd/LiF/Al (device II) and ITO/cpd/LiF/Al (device III), where these compounds (cpd = SOO-1, SOO-2, SOO-3, SOO-4, SOO-8) were used as the hole-transporting and emitting layer, electron-transporting and emitting layer, and electron- and hole-transporting as well as emitting layer, respectively. The performance of device II and device III based on SOO-3 is promising: device II has the maximum efficiency and the maximum luminescence of 3.09% and 20681 cd/m2, respectively, and the external quantum efficiency (ext) of 2.05% at a current density of 100 mA/cm2; the maximum efficiency and the maximum luminescence reach 1.69% and 15717 cd/m2, respectively, for device III. The ext also reaches 1.29% at a current density of 100mA/cm2. Spin-coating technique was used to fabricate the device ITO/PEDOT:PSS/PVK + cpd (20 wt%)/BCP (10 nm)/TPBI (40nm)/LiF (1 nm)/Al (120 nm), where cpd represents SOO-5, SOO-6 or SOO-7. Among these, SOO-6 shows the best performance: the maximum external quantum efficiency of 3.42% and the maximum luminescence of 8063 cd/m2; at the current density of 100mA/cm2, ext is as high as 1.16%. Device of configuration, ITO/ployfluorene + cpd (20 wt. %)/TPBI/ LiF/Al (cpd = SOO-9 or SOO-10), were also fabricated. The device of SOO-10 emits pure white light due to incomplete energy transfer, and the CIE coordination is at (0.35, 0.33).
Abstract A series of materials derived from 3,7-disubstituted dibenzothiophene- S,S-dioxide for electroluminescent devices have been synthesized by Stille coupling, Buchwald-Hartwig coupling, and Suzuki coupling reactions. The fluorescence colors of these compounds can be tuned from blue to orange-red. These dibenzothiophene derivatives show good thermal stabilities: the glass transition temperatures (Tg) range from 112 to 207 ℃ and high thermal decomposition temperature range from 299 to 505 ℃. Compare to 2,8-disubstituted congeners of dibenzothiophene- S,S-dioxide, the two substituents in these compounds have better electronic communication. Three types of electroluminescent devices were fabricated by using vacuum deposition: ITO/cpd/TPBI/LiF/Al (device I), ITO/NPB/cpd/LiF/Al (device II) and ITO/cpd/LiF/Al (device III), where these compounds (cpd = SOO-1, SOO-2, SOO-3, SOO-4, SOO-8) were used as the hole-transporting and emitting layer, electron-transporting and emitting layer, and electron- and hole-transporting as well as emitting layer, respectively. The performance of device II and device III based on SOO-3 is promising: device II has the maximum efficiency and the maximum luminescence of 3.09% and 20681 cd/m2, respectively, and the external quantum efficiency (ext) of 2.05% at a current density of 100 mA/cm2; the maximum efficiency and the maximum luminescence reach 1.69% and 15717 cd/m2, respectively, for device III. The ext also reaches 1.29% at a current density of 100mA/cm2. Spin-coating technique was used to fabricate the device ITO/PEDOT:PSS/PVK + cpd (20 wt%)/BCP (10 nm)/TPBI (40nm)/LiF (1 nm)/Al (120 nm), where cpd represents SOO-5, SOO-6 or SOO-7. Among these, SOO-6 shows the best performance: the maximum external quantum efficiency of 3.42% and the maximum luminescence of 8063 cd/m2; at the current density of 100mA/cm2, ext is as high as 1.16%. Device of configuration, ITO/ployfluorene + cpd (20 wt. %)/TPBI/ LiF/Al (cpd = SOO-9 or SOO-10), were also fabricated. The device of SOO-10 emits pure white light due to incomplete energy transfer, and the CIE coordination is at (0.35, 0.33).
Description
Keywords
電機發光材料