利用單槽法於Si(100)表面製備十八烯分子自組裝薄膜之研究

Abstract

單槽法製程在Si(100)表面上製備自組裝薄膜，單槽法製程結合蝕刻和自組裝薄膜生長兩步驟於同一容器中，藉由兩相溶液不互溶的特性分層，Si(100)樣品在下層NH4F的水溶液進行蝕刻除去表面的氧化層，在直接進入上層十八烯的甲苯溶液，照射白光進行自組裝薄膜生長，可以避免蝕刻後的 Si(100)表面與空氣接觸而氧化。利用不同的分析技術，如X-ray光電子能譜、原子力顯微鏡、全反射 式紅外線光譜以及接觸角量測，鑑定Si(100)表面薄膜自組裝性質。 根據結果顯示自組裝分子藉由單槽法製程成功的生長在Si(100)表面，而最後將生長ODC分子的Si(100)放置於空氣中測試抗氧化力，結果顯示蝕刻後的粗糙度和照光反應的時間對薄膜的抗氧化能力有直接的影響，單槽法比兩槽法所生成的薄膜，具有更好的抗氧化的能力。Self-assembled monolayers (SAMs) fabricate on oxide-free Si (100) in the one-cell process which combines the etching of native oxide and the fabrication of SAMs in one cell. The one-cell process use immiscible property of solutions to form two layer system – an aqueous solution of etchant and a toluene solution of precursors. First, native oxide of Si(100) was removed from surface in the down-layer of etching solution. Subsequently, the etched Si(100) was moved directly to the upper layer of the precursor solution for irradiation of white light. Without contact with air, the one-cell process effectively prevents from the oxidation of the as-etched Si surface. In this work, we employed NH4F as an etchant to produce oxide-free Si (100). The morphology of NH4F-treated of Si (100) was smoother than that that of NH4F-treated Si (111). Octadecene (ODC) was utilized to fabricate the SAMs on the oxide-free Si (100). The resulting ODC SAMs were characterized with X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), attenuated total reflectance infrared spectroscopy (ATR-IR) and water contact angle system. According to the results, the ODC SAMs were fabricated on a oxide-free Si(100) with the one-cell process. The resistance to atmospheric oxidation of ODC SAMs is associated with the morphology of oxide-free Si (100) and the irradiation time. The ODC SAMs fabricated with the one-cell process exhibited a better resistance to oxidation under the ambient atmosphere than the ones obtained with the two-cell process.