Infrared and Raman-Scattering Studies in Single-Crystalline GaN Nanowires

H.-L. Liu; Chia-Chun Chen; C.-T. Chia; C.-C. Yeh; C.-H. Chen; M.-Y. Yu; S. Keller; S. P. DenBaars

Infrared and Raman-Scattering Studies in Single-Crystalline GaN Nanowires

Date

2001-09-14

Authors

H.-L. Liu

Chia-Chun Chen

C.-T. Chia

C.-C. Yeh

C.-H. Chen

M.-Y. Yu

S. Keller

S. P. DenBaars

Publisher

Elsevier

Abstract

Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ∼View the MathML source is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron–phonon interaction in GaN nanowires.