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Title: Infrared and Raman-Scattering Studies in Single-Crystalline GaN Nanowires
Authors: 國立臺灣師範大學化學系
H.-L. Liu
Chia-Chun Chen
C.-T. Chia
C.-C. Yeh
C.-H. Chen
M.-Y. Yu
S. Keller
S. P. DenBaars
Issue Date: 14-Sep-2001
Publisher: Elsevier
Abstract: Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ∼View the MathML source is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron–phonon interaction in GaN nanowires.
ISSN: 0009-2614
Other Identifiers: ntnulib_tp_C0301_01_007
Appears in Collections:教師著作

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