利用薄膜和氣-液-固三相反應成長單層二硫化鉬

Abstract

MoS2由於其各種新穎的特性而成為最受歡迎的二維材料之一。高質量的原子級薄MoS2已被證實在先進電子設備中具有巨大的潛力。為了進一步工業化，需要對均勻性和結晶度進行嚴格控制的大規模合成技術。在這項工作中，已經報導了一種新的由NaF / SiO2 / MoO3結構合成的膜輔助氣液固(VLS)技術，並且可以獲得具有優異均勻性的毫米大小的三角形單層MoS2。研究和優化了佈置的影響以及每一層的厚度，溫度，流場和硫化階段。所獲得的單層MoS2通過拉曼，光致發光(PL)，X射線光電子能譜(XPS)和原子力顯微鏡(AFM)來表徵。已經在SiO2 / Si晶片上製造了結合了所獲得的MoS2的場效應晶體管，並研究了其在不同溫度（80-300 K）下的Id-Vg曲線，遷移率，開/關比。測量了高遷移率（32±5 cm2V-1S-1）和開/關比（5×108），這暗示了其在電子設備中的出色性能。在這項研究中，新設計的三層結構為合成其他高質量的單層過渡金屬二硫代雙金屬（TMD）材料奠定了廣闊的應用前景。 關鍵字:二硫化鉬、二維材料、場效電晶體和載子遷移率MoS2 is one of the most popular two-dimensional materials due to its various novel properties. The atomically thin MoS2 with high quality has been confirmed to have a great potential in applications in advanced electronic devices. A large-scale synthesizing technique with a great control over uniformity and crystallinity is necessary for further future industrialization. In this work, a new membrane-aided vapor-liquid-solid (VLS) synthesizing technique from a NaF/SiO2/MoO3 structure has been reported and a millimeter-sized triangular monolayer MoS2 with excellent uniformity can be obtained. The effect of the arrangement and the thickness of each layer, temperature, flow field and sulfurization stage has been studied and optimized. The obtained monolayer MoS2 is characterized by Raman, photoluminescence (PL), X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). A field-effect transistor incorporated with the obtained MoS2 has been fabricated on SiO2/Si wafer and its Id-Vg curve, mobility, on/off ratio under different temperature (80-300 K) has been studied. A high mobility (32±5 cm2V-1S-1) and on/off ratio of 5×108 have been reported indicating its respectable performance in electronic devices. The newly-designed three-layer structure in this study establishes a promising potential in synthesizing other high-quality monolayer transition metal dichalcogenide(TMD) materials for their wide range further applications. Keyword: MoS2.,2D material, FET, mobility