將二氧化矽奈米粒子直接電還原成矽
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Date
2010
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我們成功直接在CaCl2 850℃與LiCl-KCl-CaCl2 500℃或600℃電還原二氧化矽奈米粒子。一個新的二氧化矽接觸電極的方法被用來固定二氧化矽的奈米粒子。除此之外,我們用這樣的起始物可以成功的電還原出奈米等級的矽。我們不僅從TEM影像中觀察出二氧化矽粒子其大小形狀對所還原之矽大小形狀的影響,也從拉曼光譜中得知不同電還原溫度其結晶程度的差異。溫度高結晶程度較好,溫度低則較差。另一方面我們將二氧化矽包覆在金奈米粒子的外面,將其電解還原得到矽包金的奈米複合材料。此外,我們利用金奈米粒子或金奈米棒的摻入來改變二氧化矽的形狀進而成長出奈米矽棒。
The direct electrolytic reduction of SiO2 nanoparticles has been achieved in molten CaCl2 at 850℃ and in LiCl-KCl-CaCl2 at 500℃ or 600℃. A new type of SiO2 contacting electrode was prepared to fix SiO2 nanoparticles. Otherwise, we achieve silicon in nanoscale from silicon dioxide nanopartic- les. We not only observe the effect of size and shape between silicon dioxide particle and reducted silicon from TEM but also crystallization at different temperature from Raman spectra. Good crystalline at higher temperature and less crystalline at lower temperature. On the other way, we prepare Au@SiO2 particle and electrolytic reduction of Au@SiO2 to complex nanomaterial, Au@Si. And we control the shape of silicon dioxide by add Au nanoparticles or Au nanorod to approach silicon nanorod.
The direct electrolytic reduction of SiO2 nanoparticles has been achieved in molten CaCl2 at 850℃ and in LiCl-KCl-CaCl2 at 500℃ or 600℃. A new type of SiO2 contacting electrode was prepared to fix SiO2 nanoparticles. Otherwise, we achieve silicon in nanoscale from silicon dioxide nanopartic- les. We not only observe the effect of size and shape between silicon dioxide particle and reducted silicon from TEM but also crystallization at different temperature from Raman spectra. Good crystalline at higher temperature and less crystalline at lower temperature. On the other way, we prepare Au@SiO2 particle and electrolytic reduction of Au@SiO2 to complex nanomaterial, Au@Si. And we control the shape of silicon dioxide by add Au nanoparticles or Au nanorod to approach silicon nanorod.
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矽, 融鹽, 直接電還原, Silicon, molten salts, Direct Electrolytic Reduction