硼氮共摻雜石墨烯之電子元件

Abstract

石墨烯是一種二維材料，其厚度只有一層碳原子厚。是目前最薄且最硬的奈米材料，由於其具有獨特的結構與優異的物理特性。可廣泛運用在各個領域上，但因單層石墨烯能帶隙接近於零，故無法應用於半導體產業。開啟能帶結構，單層石墨烯即可以應用於半導體元件。開啟石墨烯能帶結構之方法有量子限制效應、對稱破壞與化學摻雜等。本論文使用熱化學氣相沉積法，藉由改變摻雜源BH3NH3之預熱溫度以及甲烷流量，控制硼和氮在石墨烯中之摻雜濃度，可得不同B-N摻雜濃度與能隙之摻雜石墨烯(boron carbon nitride, BNC)。藉由霍爾效應觀察不同濃度氮硼摻雜石墨烯的電性變化以及利用不同轉印方式和不同測量面積大小，光電子能譜儀、拉曼、探討BNC之鍵結與特性分析。Graphene is thick planar sheets of sp2-bonded carbon atoms. It’s the thinnest and strongest nanomaterials, because of its unique structure and excellent physical properties. It can be widely used in various fields, but the single layer graphene (SLG) energy band gap is close to zero and can not be applied to the semiconductor industry. Band gap opened single layer graphene can be used as semiconductor device. Promising opening band gap techniques for SLG include the quantum confinement, symmetry breaking and chemical doping. In this thesis, BN co-doped graphene was synthesized by thermal chemical vapor deposition using doping of boron and nitrogen. Thedoping concentrations of BN were controlled by changing the preheating temperature of BH3NH3 and mass flow rate of CH4. Then various band gap graphene will be obtained. The characteristics of the BNC were analyzed by XPS, and Raman spectroscopy. By Hall measurement can observe the change of electrical property of BN doped graphene with different transfer method and different size of area.