合成具腈基取代之多並苯衍生物及此類化合物在場效電晶體之應用
Abstract
本篇論文之目標為使用具有腈基取代之多並苯為負型半導體材料於製成有機場效電晶體。藉由加長反應及鈀金屬催化下之腈基取代反應以獲得具有適當多並苯化合物，探討光學與電學性質，並依據其晶體結構資訊做理論計算，對此類化合物之載子移動率作一研究，後進行元件製作，並改進製程期望能獲得良好之半導體元件。
Abstract The main goal of this dissertation is to construct organic field effect transistors based on cyanoacene derivatives as the N-type semiconductors. The appropriate acene compounds are synthesized via a new homoelongation reaction and palladium catalyzed cyanation reactions. The photophysical and electrochemical properties of these materials are investigated. The solid state packing of selected compounds are determined by X-ray crystallography. Based on the crystal structure, the charge mobilities within these new materials are estimated by theoretical calculation. Various techniques are also employed to optimize the performance of these compounds in devices.
Abstract The main goal of this dissertation is to construct organic field effect transistors based on cyanoacene derivatives as the N-type semiconductors. The appropriate acene compounds are synthesized via a new homoelongation reaction and palladium catalyzed cyanation reactions. The photophysical and electrochemical properties of these materials are investigated. The solid state packing of selected compounds are determined by X-ray crystallography. Based on the crystal structure, the charge mobilities within these new materials are estimated by theoretical calculation. Various techniques are also employed to optimize the performance of these compounds in devices.
Description
Keywords
多並苯, 腈基, 場效電晶體