以改良Langmuir–Schaefer技術製備大面積超薄MXene薄膜

Abstract

近年來，MXene作為一種二維材料展現出廣泛應用的潛力。其高導電性、卓越的機械性能、優越的化學穩定性以及可溶於水的特性使其在各個領域中引起了極大的關注。然而，最近才有研究開發出將MXene分層成大片單層薄片的技術。薄片的尺寸對於薄片間的接觸有著重要的影響，這對導電性和熱性能來說至關重要。因此，我們正致力於進一步瞭解和探索大片單層MXene的特性，以實現更廣泛的應用。本研究的目的是使用改進的Langmuir–Schaefer製程，以大片單層的Ti3C2和薄的V2C作為材料，製作出大面積的超薄薄膜。我們在不使超薄Ti3C2氧化的條件下，保留了原本材料的特性，成功製備了厚度約為2.13 nm、幾乎全為單層結構的大面積薄膜，並且能夠控制所需的層數。最後，我們研究了在大氣中放置的Ti3C2分層材料以及其在矽/二氧化矽基板上的氧化程度。至於V2C薄膜，我們使用厚度在1.92 nm至6.31 nm之間的薄片，成功保留了大部分V2C的化合物特性，並能夠控制其堆疊層數。

In recent years, MXene has demonstrated significant potential as a two-dimensional material with broad applications. Its high conductivity, excellent mechanical properties, superior chemical stability, and water solubility have garnered substantial attention in various fields. However, it is only recently that the technique of layering MXene into large-area single-layer flakes has been developed. The size of the flakes has a crucial influence on the inter-flake contacts, which is vital for conductivity and thermal performance. Therefore, we are devoted to further understanding and exploring the characteristics of large-area single-layer MXene to enable more extensive applications. The objective of this study is to utilize an improved Langmuir-Schaefer process to fabricate large-area ultrathin films using Ti3C2 and thin V2C as materials. We successfully prepared large-area films with a thickness of approximately 2.13 nm, consisting almost entirely of single-layer structures, while preserving the properties of the original Ti3C2 material without significant oxidation. Moreover, we achieved control over the desired number of layers. Finally, we investigated the oxidation level of the layered Ti3C2 material when exposed to ambient conditions and its behavior on silicon/silicon dioxide substrates. As for the V2C films, we employed flakes with thickness ranging from 1.92 nm to 6.31 nm, successfully preserving most of the compound's characteristics and achieving control over the stacking layers.