Quantum Dot Light-Emitting Diode Using Solution-Processable Graphene Oxide as the Anode Interfacial Layer.

D.-Y. Wang; I.-S. Wang; I.-S. Huang; Y.-C. Yeh; S.-S. Li; K.-H. Tu; Chia-Chun Chen; C.-W. Chen

Quantum Dot Light-Emitting Diode Using Solution-Processable Graphene Oxide as the Anode Interfacial Layer.

Date

2012-05-10

Authors

D.-Y. Wang

I.-S. Wang

I.-S. Huang

Y.-C. Yeh

S.-S. Li

K.-H. Tu

Chia-Chun Chen

C.-W. Chen

Publisher

American Chemical Society

Abstract

In this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.