Please use this identifier to cite or link to this item:
Title: Enhanced Emission of (In, Ga) Nitride Nanowires Embedded with Self-assembled Quantum Dots
Authors: 國立臺灣師範大學化學系
C.-W. Hsu
A. Ganguly
C.-H. Liang
Y.-T. Hung
C.-T. Wu
G.-M. Hsu
Y.-F. Chen
Chia-Chun Chen
K.-H. Chen
L.-C. Chen
Issue Date: 25-Mar-2008
Publisher: Wiley-VCH Verlag
Abstract: We report the structure and emission properties of ternary (In,Ga)N nanowires (NWs) embedded with self-assembled quantum dots (SAQDs). InGaN NWs are fabricated by the reaction of In, Ga and NH3 via a vapor–liquid–solid (VLS) mechanism, using Au as the catalyst. By simply varying the growth temperature, In-rich or Ga-rich ternary NWs have been produced. X-ray diffraction, Raman studies and transmission electron microscopy reveal a phase-separated microstructure wherein the isovalent heteroatoms are self-aggregated, forming SAQDs embedded in NWs. The SAQDs are observed to dominate the emission behavior of both In-rich and Ga-rich NWs. Temperature-dependent photoluminescence (PL) measurements indicate relaxation of excited electrons from the matrix of the Ga-rich NWs to their embedded SAQDs. A multi-level band schema is proposed for the case of In-rich NWs, which showed an anomalous enhancement in the PL peak intensity with increasing temperature accompanies with red shift in its peak position.
ISSN: 1616-301X
Other Identifiers: ntnulib_tp_C0301_01_050
Appears in Collections:教師著作

Files in This Item:
There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.