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Title: Blueshift of yellow luminescence band in self-ion-implanted n-GaN nanowire
Authors: 國立臺灣師範大學化學系
S. Dhara
A Datta
C.-T. Wu
Z.-H. Lan
K.-H. Chen
Y. -L. Wang
Y.-F. Chen
C.-W. Hsu
L.-C. Chen
H.-M. Lin
Chia-Chun Chen
Issue Date: 3-May-2004
Publisher: American Institute of Physics (AIP)
Abstract: Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally dopedn-GaNnanowires. A 50 keV Ga+focused ion beam in the fluence range of 1×1014–2×1016 ions cm−2 is used for the irradiation process. A blueshift is observed for the yellow luminescence (YL) band with increasing fluence. Donor–acceptor pair model with emission involving shallow donor introduced by point-defect clusters related to nitrogen vacancies and probable deep acceptor created by gallium interstitial clusters is responsible for the shift. High-temperature annealing in nitrogen ambient restores the peak position of YL band by removing nitrogen vacancies.
ISSN: 0003-6951
Other Identifiers: ntnulib_tp_C0301_01_027
Appears in Collections:教師著作

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