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|Title:||Blueshift of yellow luminescence band in self-ion-implanted n-GaN nanowire|
Y. -L. Wang
|Publisher:||American Institute of Physics (AIP)|
|Abstract:||Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally dopedn-GaNnanowires. A 50 keV Ga+focused ion beam in the fluence range of 1×1014–2×1016 ions cm−2 is used for the irradiation process. A blueshift is observed for the yellow luminescence (YL) band with increasing fluence. Donor–acceptor pair model with emission involving shallow donor introduced by point-defect clusters related to nitrogen vacancies and probable deep acceptor created by gallium interstitial clusters is responsible for the shift. High-temperature annealing in nitrogen ambient restores the peak position of YL band by removing nitrogen vacancies.|
|Appears in Collections:||教師著作|
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