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Title: Characterization of Nanodome on GaN Nanowires Formed with Ga Ion Irradiation
Authors: 國立臺灣師範大學化學系
S. Muto
S. Dahara
A. Datta
C.-W. Hsu
C.-T. Wu
C.-H. Shen
L. -C. Chen
K.-H. Chen
Y.-L. Wang
T. Tanabe
T. Maruyama
H.-M. Lin
Chia-Chun Chen
Issue Date: 1-Jan-2004
Publisher: Nihon Kinzoku Gakkai
Abstract: Structure of nano-domes formed by Ga+ ion irradiation with a focused ion beam (FIB) apparatus onto GaN nanowires (NWs) was examined with conventional transmission electron microscopy (CTEM), electron energy-loss spectroscopy (EELS) and energy-filtering TEM (EF-TEM). The nano-dome consisted of metallic gallium, covered by a GaN layer, the structure of which is amorphous or liquid. It is considered that the dome structure is formed by preferential displacement of lighter element (N) and agglomeration of heavier one (Ga). 1 MeV electron irradiation onto the sample pre-irradiated by Ga+ ions at a dose below the threshold for the dome formation induced the N2 bubble formation without segregating Ga atoms, which suggests the radiation-enhanced diffusion (RED) of heavy atoms plays an important role in the nano-dome formation.
ISSN: 1347-5320
Other Identifiers: ntnulib_tp_C0301_01_022
Appears in Collections:教師著作

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