Please use this identifier to cite or link to this item:
Title: Electronic Structure of GaN Nanowire Studied by x-ray-Absorption Spectroscopy and Scanning Photoelectron Microscopy
Authors: 國立臺灣師範大學化學系
J.-W. Chiou
J.-C. Jan
H.-M. Tsai
W.-F. Pong
M.-H. Tsai
I.-H. Hong
R. Rklauser
J.-F. Lee
C.-W. Hsu
H.-M. Lin
Chia-Chun Chen
C.-H. Shen
L.-C. Chen
K.-H. Chen
Issue Date: 2-Jun-2003
Publisher: American Institute of Physics(AIP) Publishing
Abstract: X-ray absorption near edge structure (XANES) and scanning photoelectron microscopy (SPEM) measurements have been employed to obtain information on the electronic structures of the GaN nanowires and thin film. The comparison of the XANES spectra revealed that the nanowires have a smaller (larger) N (Ga) K edge XANES intensity than that of the thin film, which suggests an increase (decrease) of the occupation of N 2p (Ga 4p) orbitals and an increase of the N (Ga) negative (positive) effective charge in the nanowires. The SPEM spectra showed that the Ga 3d band for the nanowires lies about 20.8 eV below the Fermi level and has a chemical shift of about -0.9 eV relative to that of the thin film. © 2003 American Institute of Physics.
ISSN: 0003-6951
Other Identifiers: ntnulib_tp_C0301_01_020
Appears in Collections:教師著作

Files in This Item:
There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.