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Title: 神經細胞非接著性甲基丙烯酸酯系正型光阻材料之製備
Authors: 國立臺灣師範大學機電工程學系
Issue Date: 17-Jan-2003
Abstract: 本研究目的針對神經細胞非接著特性偏好表面高濃度羧基的原理,研究含甲基丙烯酸酯/DNQ系光阻之神經細胞非接著覆膜材料。利用傳統DNQ系列中的偶氮奈 [酉昆 ](1,2-Naphthoquinone-2-diazido-5-sulfonyl chloride, 5- NDSC)光敏感基團與TDMol(Tricyclo[ 2,6/] decane-dimethanol)合成光敏感物質(PAC),並添加甲基丙烯酸(Methacryl acid, MAA)、甲基丙烯酸-2-羥基乙酯(2-Hydroethyl methacrylate, HEMA)及甲基丙烯酸甲酯(Methyl methacrylate, MMA)單體之共聚合物,以製備可應用於神經細胞非接著層之覆膜材料 I-line(365nm)光源的正型光阻。經由微影製程測試及SEM表面分析結果,本光阻材料適用2.38wt%TMAH顯影液,解析度可符合神經細胞軸突幾合平均寬度2μm之需求。
The neuronal cell nonattachment is sensitive to chemical functionalization, carboxylic groups, while the hydrophilic/hydrophobic balance of the photoresist surface plays at best a secondary role. In this study, we prepared for neuronal cell nonattachment material of the positive-tone photoresist. The photoactive compound is prepared by 1,2-Naphthoquinone- 2-diazido-5-sulfonyl Chloride (5-NDSC) and Tricyclo [ 2,6/] decane-dimethanol (TDMol). Copolymers containing methacryl acid, 2-hydroethyl methacrylate and methyl methacrylate were synthesized as a best polymer for I-line (365nm) lithography. A pattern profile of the resist base on methacryl acid copolymer was suited the need for the average geometry of the neurite, i.e. thick, and the conventional developer, 2. 38wt% tetrametyl-ammonium hydroxide(TMAH) aqueous solution.
Other Identifiers: ntnulib_tp_E0403_02_007
Appears in Collections:教師著作

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