神經細胞非接著性甲基丙烯酸酯系正型光阻材料之製備

Abstract

本研究目的針對神經細胞非接著特性偏好表面高濃度羧基的原理，研究含甲基丙烯酸酯/DNQ系光阻之神經細胞非接著覆膜材料。利用傳統DNQ系列中的偶氮奈 [酉昆 ](1,2-Naphthoquinone-2-diazido-5-sulfonyl chloride, 5- NDSC)光敏感基團與TDMol(Tricyclo[5.2.1.0/sup 2,6/] decane-dimethanol)合成光敏感物質(PAC)，並添加甲基丙烯酸(Methacryl acid, MAA)、甲基丙烯酸-2-羥基乙酯(2-Hydroethyl methacrylate, HEMA)及甲基丙烯酸甲酯(Methyl methacrylate, MMA)單體之共聚合物，以製備可應用於神經細胞非接著層之覆膜材料 I-line(365nm)光源的正型光阻。經由微影製程測試及SEM表面分析結果，本光阻材料適用2.38wt%TMAH顯影液，解析度可符合神經細胞軸突幾合平均寬度2μm之需求。

The neuronal cell nonattachment is sensitive to chemical functionalization, carboxylic groups, while the hydrophilic/hydrophobic balance of the photoresist surface plays at best a secondary role. In this study, we prepared for neuronal cell nonattachment material of the positive-tone photoresist. The photoactive compound is prepared by 1,2-Naphthoquinone- 2-diazido-5-sulfonyl Chloride (5-NDSC) and Tricyclo [5.2.1.0/sup 2,6/] decane-dimethanol (TDMol). Copolymers containing methacryl acid, 2-hydroethyl methacrylate and methyl methacrylate were synthesized as a best polymer for I-line (365nm) lithography. A 2.mu.m pattern profile of the resist base on methacryl acid copolymer was suited the need for the average geometry of the neurite, i.e. 2.mu.m thick, and the conventional developer, 2. 38wt% tetrametyl-ammonium hydroxide(TMAH) aqueous solution.