化學系

Permanent URI for this communityhttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/57

國立臺灣師範大學化學系座落於公館校區理學院大樓。本系成立於民國五十一年,最初僅設大學部。之後於民國六十三年、七十八年陸續成立化學研究所碩士班和博士班。本系教育目標旨在培養化學專業人才與中等學校自然及化學專業師資,授課著重理論及應用性。本系所現有師資為專任教授25人,另外尚有與中央研究院合聘教授3位,在分析、有機、無機及物理化學四個學門的基礎上發展跨領域之教學研究合作計畫。此外,本系另有助教13位,職技員工1位,協助處理一般學生實驗及行政事務。學生方面,大學部現實際共322人,碩士班現實際就學研究生共174人,博士班現實際就學共55人。

本系一向秉持著教學與研究並重,近年來為配合許多研究計畫的需求,研究設備亦不斷的更新。本系所的研究計畫大部分來自國科會的經費補助。此外,本系提供研究生獎助學金,研究生可支領助教獎學金(TA)、研究獎學金(RA)和部分的個別教授所提供的博士班學生獎學金(fellowships)。成績優良的大學部學生也可以申請獎學金。

本校圖書館藏書豐富,除了本部圖書館外,分部理學院圖書館西文藏書現有13萬餘冊,西文期刊合訂本有911餘種期刊,將近約3萬冊。此外,西文現期期刊約450種,涵蓋化學、生化、生物科技、材料及其他科學類等領域。目前本系各研究室連接校園網路,將館藏查詢、圖書流通、期刊目錄轉載等功能,納入圖書館資訊系統中,並提供多種光碟資料庫之檢索及線上資料庫如Science Citation Index,Chemical Citation Index,Chemical Abstracts,Beilstein,MDL資料庫與STICNET全國科技資訊網路之查詢。

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    Enhanced Emission of (In, Ga) Nitride Nanowires Embedded with Self-assembled Quantum Dots
    (Wiley-VCH Verlag, 2008-03-25) C.-W. Hsu; A. Ganguly; C.-H. Liang; Y.-T. Hung; C.-T. Wu; G.-M. Hsu; Y.-F. Chen; Chia-Chun Chen; K.-H. Chen; L.-C. Chen
    We report the structure and emission properties of ternary (In,Ga)N nanowires (NWs) embedded with self-assembled quantum dots (SAQDs). InGaN NWs are fabricated by the reaction of In, Ga and NH3 via a vapor–liquid–solid (VLS) mechanism, using Au as the catalyst. By simply varying the growth temperature, In-rich or Ga-rich ternary NWs have been produced. X-ray diffraction, Raman studies and transmission electron microscopy reveal a phase-separated microstructure wherein the isovalent heteroatoms are self-aggregated, forming SAQDs embedded in NWs. The SAQDs are observed to dominate the emission behavior of both In-rich and Ga-rich NWs. Temperature-dependent photoluminescence (PL) measurements indicate relaxation of excited electrons from the matrix of the Ga-rich NWs to their embedded SAQDs. A multi-level band schema is proposed for the case of In-rich NWs, which showed an anomalous enhancement in the PL peak intensity with increasing temperature accompanies with red shift in its peak position.
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    Nanohomojunction (GaN) and nanoheterojunction (InN) nanorods on one-dimensional GaN nanowire substrates
    (Wiley-VCH Verlag, 2004-03-01) Z.-H. Lan; C.-H. Liang; C.-W. Hsu; C.-T. Wu; H.-M. Lin; S. Dhara; K.-H. Chen; L.-C. Chen; Chia-Chun Chen
    The formation of homojunctions and heterojunctions on two-dimensional (2D) substrates plays a key role in the device performance of thin films. Accelerating the progress of device fabrication in nanowires (NWs) also necessitates a similar understanding in the one-dimensional (1D) system. Nanohomojunction (GaN on GaN) and nanoheterojunction (InN on GaN) nanorods (NRs) were formed in a two-step growth process by a vapor–liquid–solid (VLS) mechanism. Ga2O3 nanoribbons were formed using Ni as catalyst in a chemical vapor deposition (CVD) technique and then completely converted to GaN NWs with NH3 as reactant gas. An Au catalyst is used in the second step of the VLS process to grow GaN and InN NRs on GaN NWs using CVD techniques. A morphological study showed the formation of nanobrushes with different structural symmetries and sub-symmetries in both homogeneous and heterogeneous systems. Structural characterizations showed nearly defect-free growth of nanohomojunction (GaN) and nanoheterojunction (InN) NRs on 1D GaN NW substrates.
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    Large-Scale Catalytic Synthesis of Crystalline Gallium Nitride Nanowires
    (Wiley-VCH Verlag, 2000-05-01) Chia-Chun Chen; Chun-Chia Yeh
    GaN nanowires for high-efficiency optoelectronic devices? The simple method for the large-scale production of GaN nanowires presented here may bring us one step closer. Gallium and ammonia are reacted, using polycrystalline indium powder as a catalyst, to produce wire-like structures (see Figure) that show strong photoluminescence of the nanowires in the UV region.