化學系

Permanent URI for this communityhttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/57

國立臺灣師範大學化學系座落於公館校區理學院大樓。本系成立於民國五十一年,最初僅設大學部。之後於民國六十三年、七十八年陸續成立化學研究所碩士班和博士班。本系教育目標旨在培養化學專業人才與中等學校自然及化學專業師資,授課著重理論及應用性。本系所現有師資為專任教授25人,另外尚有與中央研究院合聘教授3位,在分析、有機、無機及物理化學四個學門的基礎上發展跨領域之教學研究合作計畫。此外,本系另有助教13位,職技員工1位,協助處理一般學生實驗及行政事務。學生方面,大學部現實際共322人,碩士班現實際就學研究生共174人,博士班現實際就學共55人。

本系一向秉持著教學與研究並重,近年來為配合許多研究計畫的需求,研究設備亦不斷的更新。本系所的研究計畫大部分來自國科會的經費補助。此外,本系提供研究生獎助學金,研究生可支領助教獎學金(TA)、研究獎學金(RA)和部分的個別教授所提供的博士班學生獎學金(fellowships)。成績優良的大學部學生也可以申請獎學金。

本校圖書館藏書豐富,除了本部圖書館外,分部理學院圖書館西文藏書現有13萬餘冊,西文期刊合訂本有911餘種期刊,將近約3萬冊。此外,西文現期期刊約450種,涵蓋化學、生化、生物科技、材料及其他科學類等領域。目前本系各研究室連接校園網路,將館藏查詢、圖書流通、期刊目錄轉載等功能,納入圖書館資訊系統中,並提供多種光碟資料庫之檢索及線上資料庫如Science Citation Index,Chemical Citation Index,Chemical Abstracts,Beilstein,MDL資料庫與STICNET全國科技資訊網路之查詢。

News

Browse

Search Results

Now showing 1 - 3 of 3
  • Item
    Hexagonal-to-Cubic Phase Transformation in GaN Nanowires by Ga+ Implantation
    (American Institute of Physics (AIP), 2004-06-28) S. Dahara; A. Datta; C.-T. Wu; Z.-H. Lan; K.-H. Chen; Y. -L. Wang; C.-W. Hsu; C.-H. Shen; L.-C. Chen; Chia-Chun Chen
    Hexagonal to cubic phase transformation is studied in focused ion beam assisted Ga+-implanted GaNnanowires. Optical photoluminescence and cathodoluminescence studies along with high-resolution transmission electron microscopic structural studies are performed to confirm the phase transformation. In one possibility, sufficient accumulation of Ga from the implanted source might have reduced the surface energy and simultaneously stabilized the cubic phase. Another potential reason may be that the fluctuations in the short-range order induced by enhanced dynamic annealing (defect annihilation) with the irradiation process stabilize the cubic phase and cause the phase transformation.
  • Item
    Electronic Structure of GaN Nanowire Studied by x-ray-Absorption Spectroscopy and Scanning Photoelectron Microscopy
    (American Institute of Physics(AIP) Publishing, 2003-06-02) J.-W. Chiou; J.-C. Jan; H.-M. Tsai; W.-F. Pong; M.-H. Tsai; I.-H. Hong; R. Rklauser; J.-F. Lee; C.-W. Hsu; H.-M. Lin; Chia-Chun Chen; C.-H. Shen; L.-C. Chen; K.-H. Chen
    X-ray absorption near edge structure (XANES) and scanning photoelectron microscopy (SPEM) measurements have been employed to obtain information on the electronic structures of the GaN nanowires and thin film. The comparison of the XANES spectra revealed that the nanowires have a smaller (larger) N (Ga) K edge XANES intensity than that of the thin film, which suggests an increase (decrease) of the occupation of N 2p (Ga 4p) orbitals and an increase of the N (Ga) negative (positive) effective charge in the nanowires. The SPEM spectra showed that the Ga 3d band for the nanowires lies about 20.8 eV below the Fermi level and has a chemical shift of about -0.9 eV relative to that of the thin film. © 2003 American Institute of Physics.
  • Item
    Characterization of Nanodome on GaN Nanowires Formed with Ga Ion Irradiation
    (Nihon Kinzoku Gakkai, 2004-01-01) S. Muto; S. Dahara; A. Datta; C.-W. Hsu; C.-T. Wu; C.-H. Shen; L. -C. Chen; K.-H. Chen; Y.-L. Wang; T. Tanabe; T. Maruyama; H.-M. Lin; Chia-Chun Chen
    Structure of nano-domes formed by Ga+ ion irradiation with a focused ion beam (FIB) apparatus onto GaN nanowires (NWs) was examined with conventional transmission electron microscopy (CTEM), electron energy-loss spectroscopy (EELS) and energy-filtering TEM (EF-TEM). The nano-dome consisted of metallic gallium, covered by a GaN layer, the structure of which is amorphous or liquid. It is considered that the dome structure is formed by preferential displacement of lighter element (N) and agglomeration of heavier one (Ga). 1 MeV electron irradiation onto the sample pre-irradiated by Ga+ ions at a dose below the threshold for the dome formation induced the N2 bubble formation without segregating Ga atoms, which suggests the radiation-enhanced diffusion (RED) of heavy atoms plays an important role in the nano-dome formation.