教師著作

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Subject: search.filters.subject.Gallium nitride

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    非等方性半導體奈米粒子的製備、性質探討及其在生化與光電上之應用(I)光子晶體的化學製備與應用(II)
    (行政院國家科學委員會, 2002-07-31) 陳家俊
    Close packed 3-dimensional (3D) arrays of silica spheres assembled on an indium tin oxide (ITO) substrate surface have been prepared using sedimentation in the solution. Both galvanostatical and potentiostatical electrochemical depositions have been tested to infiltrate six different semiconductors, ZnSe, PbSe, CdSe, CdS, CdTe and GaAs, onto the 3D silica arrays. The detailed studies of deposition parameters such as current density, deposition time, concentrations of electrolytes, solvents and temperatures were performed to ensure the quality of resulting semiconductor films on the arrays. Following by the removal of the silica arrays, 3D macroporous structures made from those semiconductors were obtained and the structures exhibited 3D periodicity and uniformity. Clear diffraction peaks at ~1350 nm of CdSe and CdS macroporous films were observed.
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    Large-Scale Catalytic Synthesis of Crystalline Gallium Nitride Nanowires
    (Wiley-VCH Verlag, 2000-05-01) Chia-Chun Chen; Chun-Chia Yeh
    GaN nanowires for high-efficiency optoelectronic devices? The simple method for the large-scale production of GaN nanowires presented here may bring us one step closer. Gallium and ammonia are reacted, using polycrystalline indium powder as a catalyst, to produce wire-like structures (see Figure) that show strong photoluminescence of the nanowires in the UV region.