教師著作

Permanent URI for this collectionhttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/37076

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Author: search.filters.author.S.-S. Li

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    Solution-Processable Pyrite FeS2 Nanocrystals for the Fabrication of Heterojunction Photodiodes with Visible to NIR Photodetection
    (Wiley-VCH Verlag, 2012-07-03) D.-Y. Wang; Y.-T. Jiang; C.-C. Lin; S.-S. Li; Y.T. Wang; Chia-Chun Chen; C.-W. Chen
    A heterojunction photodiode with NIR photoresponse using solution processable pyrite FeS2 nanocrystal ink is demonstrated which has the advantages of earth-abundance and non-toxicity. The device consists of a FeS2 nanocrystal (NC) thin film sandwiched with semiconducting metal oxides with a structure of ITO/ZnO/FeS2 NC/MoO3/Au, which exhibits an excellent photoresponse with a spectral response extended to NIR wavelengths of up to 1150 nm and a high photocurrent/dark current ratio of up to 8000 at -1 V under AM1.5 illumination (100 mW cm−2).
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    Quantum Dot Light-Emitting Diode Using Solution-Processable Graphene Oxide as the Anode Interfacial Layer.
    (American Chemical Society, 2012-05-10) D.-Y. Wang; I.-S. Wang; I.-S. Huang; Y.-C. Yeh; S.-S. Li; K.-H. Tu; Chia-Chun Chen; C.-W. Chen
    In this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.