教師著作

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Author: search.filters.author.C.-W. Lin

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    Type-II heterojunction organic/inorganic hybrid non-volatile memory based on FeS(2) nanocrystals embedded in poly(3-hexylthiophene)
    (IOP Publishing, 2011-07-27) C.-W. Lin; D.-Y. Wang; Y. Tai; Y.-T. Jiang; M.-C. Chen; Chia-Chun Chen; Y.-J. Yang; Y.-F. Chen
    Electrical bistable behaviour was demonstrated in memory devices based on n-type FeS2 nanocrystals (NCs) embedded in a p-type poly(3-hexylthiophene) (P3HT) matrix. An organic/inorganic hybrid non-volatile memory device with a type-II band alignment, fabricated by a spin-coating process, exhibited electrical bistable characteristics. The bistable behaviour of carrier transport can be well described through the space-charge-limited current model. The small amount of FeS2 NCs in this device serve as an excellent charge trapping medium arising from the type-II band alignment between FeS2 and P3HT. Our study suggests a new way to integrate non-volatile memory with other devices such as transistor or photovoltaic since the presented FeS2/P3HT offers a type-II band alignment.
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    Increased Photocurrent in Bulk-heterojunction Solar Cells Mediated by FeS(2) Nanocrystals
    (Elsevier, 2011-04-01) C.-W. Lin; D.-Y. Wang; Y.-T. Wang; Chia-Chun Chen; J.-Y. Yang; Y.-F. Chen
    We found that the efficiency of bulk-heterojunction (BHJ) solar cells can be enhanced by incorporating a small amount of semiconductor FeS2 nanocrystals (NCs) into the poly(3-hexylthiophene) (P3HT) and (6,6)-phenyl C61-butyric acid methyl ester (PCBM) based active layer. Through optical and nanoscale structure measurements, it is evident that low-cost and non-toxic FeS2 NCs in such devices can efficiently improve charge carrier transport and exciton dissociation. This simple approach for increasing the photocurrent by NCs will be useful for accelerating the development of practical applications using organic solar cells.