毫米波之寬頻可變增益放大器與功率放大器設計
dc.contributor | 蔡政翰 | zh_TW |
dc.contributor | Tsai, Jeng-Han | en_US |
dc.contributor.author | 陳鈞霖 | zh_TW |
dc.contributor.author | Chen, Chun-Lin | en_US |
dc.date.accessioned | 2023-12-08T07:47:17Z | |
dc.date.available | 2028-08-14 | |
dc.date.available | 2023-12-08T07:47:17Z | |
dc.date.issued | 2023 | |
dc.description.abstract | 隨著全球進入5G通訊的時代,毫米波的研究和發展越來越重要。其中毫米波所擁有的優勢為高速傳輸速率、較寬的頻寬和較低的延遲,因此,毫米波的運用變成眾人的發展目標。本論文將分別使用90-nm互補式金屬氧化物半導體製程和65-nm互補式金屬氧化物半導體製程,來實現主頻為28 GHz的寬頻增益放大器與寬頻功率放大器。第一個電路為28 GHz寬頻增益放大器,使用兩極皆為疊接組態增加整體的增益,同時使用第一級電流控制架構和基極偏壓技術,來達成較寬高的可變增益範圍,在可變增益範圍維持的前提下,使用共振腔及相位反轉技術達到低相位差。在這顆電路中,實現27 GHz~40 GHz的頻寬,增益皆大於16 dB,可變增益範圍皆可達到6.7,而相位差則低於5度。第二個電路為28 GHz寬頻功率放大器,利用兩級串接的方法增加電路的增益,同時利用變壓器來當作匹配網路和功率結合的元件,第二級放大器採用F類來提高效率。當操作頻率為28GHz時,功率增益(Power gain)為25.588 dB,飽和輸出功率(Psat)為16.558 dBm,最大功率附加效率Peak PAE約為44.821 %,1-dB增益壓縮點之輸出功率(OP1dB)約為12.941 dBm,整體靜態電流約為15.64 mA,功率消耗為18.768 mW。 | zh_TW |
dc.description.abstract | As the world enters the 5G communication, the research and development of millimeter-wave technologies have become increasingly important. A millimeter-wave band offers advantages such as high data-rate, wider bandwidth, and lower latency, making it a prominent focus of development. In this paper, we use 90-nm and 65-nm CMOS process to design two amplifiers centered at the frequency of 28-GHz, They are a broadband variable gain amplifier and broadband power amplifier.The first circuit is a 28-GHz broadband variable gain amplifier. In this circuit, we designed with a cascode topology in both stages to increase gain. The current streeing is added in first satge and used body bias to achieve a wide variable gain range. Additionally, LC resonant and phase inversion are utilized to minimize phase variation while maintaining the variable gain range. The circuit achieve a bandwidth from 27-GHz to 40-GHz, with the gain of more than 16 dB, and a variable gain range greater than 6.7. Finally, the phase difference is below 5 degrees.The second circuit is a 28-GHz broadband power amplifier. We designed with two-stage to increase the gain in this circuit. The transformer plays a role in matching network and power combining. The second-stage is class-F amplifier to improve efficiency. When operating at 28GHz, the power gain is 25.588 dB, the saturated output power is 16.558 dBm, the peak PAE is 44.821%, and the output power at 1-dB gain compression point is 12.941 dBm. The current is 15.64 mA, and the power consumption is 18.768 mW. | en_US |
dc.description.sponsorship | 電機工程學系 | zh_TW |
dc.identifier | 61075011H-44077 | |
dc.identifier.uri | https://etds.lib.ntnu.edu.tw/thesis/detail/ca3f73485810494be89aa7eeb50466b0/ | |
dc.identifier.uri | http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/120332 | |
dc.language | 中文 | |
dc.subject | 可變增益放大器 | zh_TW |
dc.subject | 電流控制架構 | zh_TW |
dc.subject | 基極偏壓 | zh_TW |
dc.subject | 功率放大器 | zh_TW |
dc.subject | F類放大器 | zh_TW |
dc.subject | 共振腔 | zh_TW |
dc.subject | 相位反轉 | zh_TW |
dc.subject | 變壓器 | zh_TW |
dc.subject | 二級串接 | zh_TW |
dc.subject | Variable Gain Amplifier | en_US |
dc.subject | Current Steering | en_US |
dc.subject | Body Bias | en_US |
dc.subject | Power Amplifier | en_US |
dc.subject | Class-F | en_US |
dc.subject | Complementary Metal Oxide Semiconductor | en_US |
dc.subject | LC resonant | en_US |
dc.subject | phase compensation | en_US |
dc.subject | transformer | en_US |
dc.subject | two-stage cascode | en_US |
dc.title | 毫米波之寬頻可變增益放大器與功率放大器設計 | zh_TW |
dc.title | Design of Broadband Millimeter-Wave Variable Gain Amplifier and Power Amplifier | en_US |
dc.type | etd |