Direct evidence of type II band alignment in nanoscale P3HT/CdSe heterostructures

dc.contributor國立臺灣師範大學化學系zh_tw
dc.contributor.authorC.-H. Wangen_US
dc.contributor.authorC.-W. Chenen_US
dc.contributor.authorY.-T. Chenen_US
dc.contributor.authorC.-T. Chenen_US
dc.contributor.authorY.-F.Chenen_US
dc.contributor.authorS.-W. Chouen_US
dc.contributor.authorChia-Chun Chenen_US
dc.date.accessioned2014-12-02T06:41:36Z
dc.date.available2014-12-02T06:41:36Z
dc.date.issued2011-02-11zh_TW
dc.description.abstractDue to inherent advantages of both constituent materials, organic/inorganic hybrid composites have attracted increasing attention. One of the fundamental issues needed to be resolved is their band alignment, which governs most of the electrical and optical properties. Here, we report the investigation of optical transition in poly(3-hexylthiophene) (P3HT)/CdSe nano-composites (NCs). It is found that the relaxation dynamics of photo-carriers in NCs is dominated by charge separation effects. Based on the band bending effect and the quantum confinement energy of electrons in the conduction band of CdSe quantum dots, we provide direct evidence of type II band alignment in P3HT/CdSe NCs. The establishment of a type II transition in NCs is very useful for the future design of efficient optoelectronic devices based on conjugated polymer/semiconductor hybrid systems.en_US
dc.description.urihttp://iopscience.iop.org/0957-4484/22/6/065202/pdf/0957-4484_22_6_065202.pdfzh_TW
dc.identifierntnulib_tp_C0301_01_069zh_TW
dc.identifier.issn0957-4484zh_TW
dc.identifier.urihttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42353
dc.languageen_USzh_TW
dc.publisherIOP Publishingen_US
dc.relationNanotechnology, 22(6), 065202.en_US
dc.relation.urihttp://dx.doi.org/10.1088/0957-4484/22/6/065202zh_TW
dc.titleDirect evidence of type II band alignment in nanoscale P3HT/CdSe heterostructuresen_US

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