非晶半導體的能隙狀態密度

dc.contributor.author蘇賢錫zh_tw
dc.date.accessioned2014-10-27T15:24:10Z
dc.date.available2014-10-27T15:24:10Z
dc.date.issued1984-06-??zh_TW
dc.description.abstractA one-electron theory of non-equilibrium trap occupancy in amorphous semiconductors has been proposed, resulting in simple expressions for electrons in states above the equilibrium Fermi level. The state density is then obtained by transient photoconductivity analysis.en_US
dc.identifier5E0FB565-FD8F-8920-D0BD-6E0A3C3EE778zh_TW
dc.identifier.urihttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/17213
dc.language中文zh_TW
dc.publisher國立臺灣師範大學研究發展處zh_tw
dc.publisherOffice of Research and Developmenten_US
dc.relation(29),553-558zh_TW
dc.relation.ispartof師大學報zh_tw
dc.subject.other半導體zh_tw
dc.subject.other非晶zh_tw
dc.subject.other能隙狀態zh_tw
dc.subject.other密度zh_tw
dc.title非晶半導體的能隙狀態密度zh-tw
dc.title.alternativeThe Gap State Density in Amorphous Semiconductorszh_tw

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