非晶半導體的能隙狀態密度

dc.contributor.author	蘇賢錫	zh_tw
dc.date.accessioned	2014-10-27T15:24:10Z
dc.date.available	2014-10-27T15:24:10Z
dc.date.issued	1984-06-??	zh_TW
dc.description.abstract	A one-electron theory of non-equilibrium trap occupancy in amorphous semiconductors has been proposed, resulting in simple expressions for electrons in states above the equilibrium Fermi level. The state density is then obtained by transient photoconductivity analysis.	en_US
dc.identifier	5E0FB565-FD8F-8920-D0BD-6E0A3C3EE778	zh_TW
dc.identifier.uri	http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/17213
dc.language	中文	zh_TW
dc.publisher	國立臺灣師範大學研究發展處	zh_tw
dc.publisher	Office of Research and Development	en_US
dc.relation	(29)，553-558	zh_TW
dc.relation.ispartof	師大學報	zh_tw
dc.subject.other	半導體	zh_tw
dc.subject.other	非晶	zh_tw
dc.subject.other	能隙狀態	zh_tw
dc.subject.other	密度	zh_tw
dc.title	非晶半導體的能隙狀態密度	zh-tw
dc.title.alternative	The Gap State Density in Amorphous Semiconductors	zh_tw

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