非晶半導體的能隙狀態密度
dc.contributor.author | 蘇賢錫 | zh_tw |
dc.date.accessioned | 2014-10-27T15:24:10Z | |
dc.date.available | 2014-10-27T15:24:10Z | |
dc.date.issued | 1984-06-?? | zh_TW |
dc.description.abstract | A one-electron theory of non-equilibrium trap occupancy in amorphous semiconductors has been proposed, resulting in simple expressions for electrons in states above the equilibrium Fermi level. The state density is then obtained by transient photoconductivity analysis. | en_US |
dc.identifier | 5E0FB565-FD8F-8920-D0BD-6E0A3C3EE778 | zh_TW |
dc.identifier.uri | http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/17213 | |
dc.language | 中文 | zh_TW |
dc.publisher | 國立臺灣師範大學研究發展處 | zh_tw |
dc.publisher | Office of Research and Development | en_US |
dc.relation | (29),553-558 | zh_TW |
dc.relation.ispartof | 師大學報 | zh_tw |
dc.subject.other | 半導體 | zh_tw |
dc.subject.other | 非晶 | zh_tw |
dc.subject.other | 能隙狀態 | zh_tw |
dc.subject.other | 密度 | zh_tw |
dc.title | 非晶半導體的能隙狀態密度 | zh-tw |
dc.title.alternative | The Gap State Density in Amorphous Semiconductors | zh_tw |
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