非晶半導體的能隙狀態密度

Date
1984-06-??
Authors
蘇賢錫
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國立臺灣師範大學研究發展處
Office of Research and Development
Abstract
A one-electron theory of non-equilibrium trap occupancy in amorphous semiconductors has been proposed, resulting in simple expressions for electrons in states above the equilibrium Fermi level. The state density is then obtained by transient photoconductivity analysis.
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