Optical Characterization of Wurtzite Gallium Nitride Nanowires

Abstract

The optical properties of the gallium nitride(GaN)nanowires are examined by the transmission method in the ultraviolet-visible range (1–5 eV) and by the reflection method in the infrared range (500–4000 cm−1). The absorption edge of the GaNnanowires is blueshifted by 0.2 eV from the bulk edge. The temperature dependence of the energy gap is expressed by, Eg(T)=3.724−9.97×10−4/(861+T) eV. The plasma frequency and the free-carrier density of the GaNnanowires, deduced from the infrared reflectance minima, are estimated to be ωp=1100±120 cm−1 and nf=3.73×1017 cm−3, respectively. Obtaining the free-carrier density from the infrared reflectance spectra is especially useful in research on nanostructured semiconductors.