Controlled Growth of Aluminium Nitride Nanorod Arrays via Chemical Vapour Deposition

dc.contributor國立臺灣師範大學化學系zh_tw
dc.contributor.authorJ. Yangen_US
dc.contributor.authorT.-W. Liuen_US
dc.contributor.authorC.-W. Hsuen_US
dc.contributor.authorL.-C. Chenen_US
dc.contributor.authorK.-H. Chenen_US
dc.contributor.authorChia-Chun Chenen_US
dc.date.accessioned2014-12-02T06:41:33Z
dc.date.available2014-12-02T06:41:33Z
dc.date.issued2006-06-14zh_TW
dc.description.abstractLarge-area and high-density arrays of AlN nanorods were synthesized at low temperature via a template-free and catalyst-free chemical vapour deposition. The quasi-aligned AlN nanorods were identified to grow along the c-axis and preferentially orient with their growth direction perpendicular to the substrate. Further studies showed that the AlN nanorods were grown on a buffer layer formed at the beginning of the reaction. By changing the flow rate of the carrier gas at the beginning of the reaction, we successfully obtained nanorods with different orientations on the substrate. The Raman spectrum and cathodoluminescence spectrum of the AlN nanorods at room temperature reveal the existence of oxygen-related defects in the nanorods.en_US
dc.description.urihttp://iopscience.iop.org/0957-4484/17/11/S15/pdf/0957-4484_17_11_S15.pdfzh_TW
dc.identifierntnulib_tp_C0301_01_039zh_TW
dc.identifier.issn0957-4484zh_TW
dc.identifier.urihttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42323
dc.languageen_USzh_TW
dc.publisherIOP Publishingen_US
dc.relationNanotechnology, 17(11), S321-S326.en_US
dc.relation.urihttp://dx.doi.org/10.1088/0957-4484/17/11/S15zh_TW
dc.titleControlled Growth of Aluminium Nitride Nanorod Arrays via Chemical Vapour Depositionen_US

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