Interband Optical Transitions in GaN Nanotubes Encapsulated GaP nanowires
| dc.contributor | 國立臺灣師範大學化學系 | zh_tw |
| dc.contributor.author | M.-W. Lee | en_US |
| dc.contributor.author | H.-C. Hseuh | en_US |
| dc.contributor.author | H.-M. Lin | en_US |
| dc.contributor.author | Chia-Chun Chen | en_US |
| dc.date.accessioned | 2014-12-02T06:41:31Z | |
| dc.date.available | 2014-12-02T06:41:31Z | |
| dc.date.issued | 2003-04-30 | zh_TW |
| dc.description.abstract | This work investigates the optical properties of cylindrical GaP nanowires encapsulated inside GaN nanotubes (GaP@GaN). Many absorption structures are observed in the range of 2.0–4 eV. Calculations are performed to determine the quantized energy levels of electrons and holes confined in the GaP well. Analytical results indicate that the absorption peaks are attributable to interband optical transitions due to the confined carriers in the heterostructure. | en_US |
| dc.description.uri | http://journals.aps.org/prb/pdf/10.1103/PhysRevB.67.161309 | zh_TW |
| dc.identifier | ntnulib_tp_C0301_01_019 | zh_TW |
| dc.identifier.issn | 1098-0121 | zh_TW |
| dc.identifier.uri | http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42303 | |
| dc.language | en_US | zh_TW |
| dc.publisher | AMERICAN PHYSICAL SOCIETY | en_US |
| dc.relation | PHYSICAL REVIEW -SERIES B, 67(16), 161309-4. | en_US |
| dc.relation.uri | http://dx.doi.org/10.1103/PhysRevB.67.161309 | zh_TW |
| dc.title | Interband Optical Transitions in GaN Nanotubes Encapsulated GaP nanowires | en_US |