Carrier Transfer Induced Photoluminescence Change in Metal-Semiconductor Core-Shell Nanostructures

dc.contributor 國立臺灣師範大學化學系 zh_tw
dc.contributor.author H.-Y. Lin en_US
dc.contributor.author Y.-F. Chen en_US
dc.contributor.author J.-G. Wu en_US
dc.contributor.author D.-I. Wang en_US
dc.contributor.author Chia-Chun Chen en_US
dc.date.accessioned 2014-12-02T06:41:33Z
dc.date.available 2014-12-02T06:41:33Z
dc.date.issued 2006-04-17 zh_TW
dc.description.abstract Metal-semiconductor core-shell nanostructures have been synthesized to explore the influence of metal nanostructures on the photoluminescence of semiconductors. Up to 40 times enhancement in the emission intensity was observed in the Au–CdS core-shell nanostructures. The mechanism where the excited electrons on Au surface by surface plasmon wave transfer to the conduction band of the CdS shell and recombine with holes in the valence band was proposed to interpret the enhancement. Our model can also be used to explain the quenched emission in FePt–CdS core-shell nanostructures and Au–CdSe nanodumbbells. en_US
dc.description.uri http://scitation.aip.org/docserver/fulltext/aip/journal/apl/88/16/1.2197311.pdf?expires=1395383661&id=id&accname=424340&checksum=3160DFC3D82B886E6F7B0A44C4771633 zh_TW
dc.identifier ntnulib_tp_C0301_01_037 zh_TW
dc.identifier.issn 0003-6951 zh_TW
dc.identifier.uri http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42321
dc.language en_US zh_TW
dc.publisher American Institute of Physics en_US
dc.relation Applied Physics Letters, 88(16), 161911. en_US
dc.relation.uri http://dx.doi.org/+10.1063/1.2197311� zh_TW
dc.title Carrier Transfer Induced Photoluminescence Change in Metal-Semiconductor Core-Shell Nanostructures en_US
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