High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment

dc.contributor 國立臺灣師範大學化學系 zh_tw
dc.contributor.author C.-L. Hsiao en_US
dc.contributor.author T.-W. Liu en_US
dc.contributor.author C.-T. Wu en_US
dc.contributor.author H.-C. Hsu en_US
dc.contributor.author G.-M. Hsu en_US
dc.contributor.author L.-C. Chen en_US
dc.contributor.author W.-Y. Shiao en_US
dc.contributor.author C.-C. Yang en_US
dc.contributor.author A. Gaellstroem en_US
dc.contributor.author P.-O. Holtz en_US
dc.contributor.author Chia-Chun Chen en_US
dc.contributor.author K.-H. Chen en_US
dc.date.accessioned 2014-12-02T06:41:34Z
dc.date.available 2014-12-02T06:41:34Z
dc.date.issued 2008-03-17 zh_TW
dc.description.abstract High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r-plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors. en_US
dc.description.uri http://scitation.aip.org/docserver/fulltext/aip/journal/apl/92/11/1.2898214.pdf?expires=1395387204&id=id&accname=424340&checksum=E6A54E2F1B90E387A4EB5EE6A88C3299 zh_TW
dc.identifier ntnulib_tp_C0301_01_049 zh_TW
dc.identifier.issn 0003-6951 zh_TW
dc.identifier.uri http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42333
dc.language en_US zh_TW
dc.publisher American Institute of Physics (AIP) en_US
dc.relation Applied Physics Letters, 92(11), 111914. en_US
dc.relation.uri http://dx.doi.org/10.1063/1.2898214 zh_TW
dc.title High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment en_US