Fabrication of 3D Macroporous Structures of II?VI and III?V Semiconductors Using Electrochemical Deposition

dc.contributor 國立臺灣師範大學化學系 zh_tw
dc.contributor.author Y.-C. Lee en_US
dc.contributor.author T.-J. Kuo en_US
dc.contributor.author C.-J. Hsu en_US
dc.contributor.author Y.-W. Su en_US
dc.contributor.author Chia-Chun Chen en_US
dc.date.accessioned 2014-12-02T06:41:30Z
dc.date.available 2014-12-02T06:41:30Z
dc.date.issued 2002-12-10 zh_TW
dc.description.abstract Close-packed three-dimensional (3D) arrays of silica spheres assembled on an indium tin oxide (ITO) substrate surface have been prepared using sedimentation in the solution. Both galvanostatic and potentiostatic electrochemical depositions have been tested to infiltrate six different semiconductors, ZnSe, PbSe, CdSe, CdS, CdTe, and GaAs, onto the 3D silica arrays. The detailed studies of deposition parameters such as current density, deposition time, concentrations of electrolytes, solvents, and temperatures were performed to ensure the quality of resulting semiconductor films on the arrays. Followed by the removal of the silica arrays, 3D macroporous structures made from those semiconductors were obtained, and the structures exhibited 3D periodicity and uniformity. Clear diffraction peaks at 1350 nm of CdSe and CdS macroporous films were observed. en_US
dc.description.uri http://pubs.acs.org/doi/pdf/10.1021/la020296h zh_TW
dc.identifier ntnulib_tp_C0301_01_013 zh_TW
dc.identifier.issn 0743-7463 zh_TW
dc.identifier.uri http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42297
dc.language en_US zh_TW
dc.publisher American Chemical Society en_US
dc.relation Langmuir, 18(25), 9942-9946. en_US
dc.relation.uri http://dx.doi.org/10.1021/la020296h zh_TW
dc.title Fabrication of 3D Macroporous Structures of II?VI and III?V Semiconductors Using Electrochemical Deposition en_US
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