無機鈣鈦礦電阻式記憶發光二極體光電整合元件之製作與研究
No Thumbnail Available
Date
2018
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
本文的研究主體：全無機CsPbX3(X = Br，I，Cl )之鈣鈦礦材料於發光二極體之發光層與元件結構之應用。針對無機鈣鈦礦薄膜材料的製程並使其發光。除此之外，使用常溫法合成無機鈣鈦礦，並縮短其製成時間。採用X光繞射儀(XRD)、電子顯微鏡(SEM)、光激發螢光光譜(PL)鑑定鈣鈦礦材料特性，進一步應用至本文多層鈣鈦礦發光元件的結構。
藉由調控鈣鈦礦陰離子的比例，發出不同波長的光，使用Ocean Optics USB4000光譜儀量測樣品電致發光光的波段，並設計鈣鈦礦電化學發光元件(LEC)與電阻式記憶體(RRAM)的結合。
In this study,we use hot-injection method and Room-Temperature Synthesis. The characteristics of perovskite materials were identified by X-ray diffraction (XRD), electron microscopy (SEM) and photoluminescence (PL), and further applied to the structure of multilayer perovskite light-emitting diodes. Emites different wavelengths by regulating the proportion of perovskite anions.And Integrated LEC and RRAM.
In this study,we use hot-injection method and Room-Temperature Synthesis. The characteristics of perovskite materials were identified by X-ray diffraction (XRD), electron microscopy (SEM) and photoluminescence (PL), and further applied to the structure of multilayer perovskite light-emitting diodes. Emites different wavelengths by regulating the proportion of perovskite anions.And Integrated LEC and RRAM.
Description
Keywords
鈣鈦礦, 發光二極體, 熱注入, 發光電化學, 電阻式記憶體, 常溫合成, Perovskite, hot injection, Light Emitting Diodes(LEDs), Light-emitting electrochemical cell(LEC), Resistive random-access memory(RRAM), Room-Temperature Synthesis