無機鈣鈦礦電阻式記憶發光二極體光電整合元件之製作與研究
dc.contributor | 李亞儒 | zh_TW |
dc.contributor | Lee, Ya-Ju | en_US |
dc.contributor.author | 李懿泓 | zh_TW |
dc.contributor.author | Li, Yi-Hong | en_US |
dc.date.accessioned | 2019-09-04T01:28:12Z | |
dc.date.available | 不公開 | |
dc.date.available | 2019-09-04T01:28:12Z | |
dc.date.issued | 2018 | |
dc.description.abstract | 本文的研究主體:全無機CsPbX3(X = Br,I,Cl )之鈣鈦礦材料於發光二極體之發光層與元件結構之應用。針對無機鈣鈦礦薄膜材料的製程並使其發光。除此之外,使用常溫法合成無機鈣鈦礦,並縮短其製成時間。採用X光繞射儀(XRD)、電子顯微鏡(SEM)、光激發螢光光譜(PL)鑑定鈣鈦礦材料特性,進一步應用至本文多層鈣鈦礦發光元件的結構。 藉由調控鈣鈦礦陰離子的比例,發出不同波長的光,使用Ocean Optics USB4000光譜儀量測樣品電致發光光的波段,並設計鈣鈦礦電化學發光元件(LEC)與電阻式記憶體(RRAM)的結合。 | zh_TW |
dc.description.abstract | In this study,we use hot-injection method and Room-Temperature Synthesis. The characteristics of perovskite materials were identified by X-ray diffraction (XRD), electron microscopy (SEM) and photoluminescence (PL), and further applied to the structure of multilayer perovskite light-emitting diodes. Emites different wavelengths by regulating the proportion of perovskite anions.And Integrated LEC and RRAM. | en_US |
dc.description.sponsorship | 光電科技研究所 | zh_TW |
dc.identifier | G060548040S | |
dc.identifier.uri | http://etds.lib.ntnu.edu.tw/cgi-bin/gs32/gsweb.cgi?o=dstdcdr&s=id=%22G060548040S%22.&%22.id.& | |
dc.identifier.uri | http://rportal.lib.ntnu.edu.tw:80/handle/20.500.12235/98042 | |
dc.language | 中文 | |
dc.subject | 鈣鈦礦 | zh_TW |
dc.subject | 發光二極體 | zh_TW |
dc.subject | 熱注入 | zh_TW |
dc.subject | 發光電化學 | zh_TW |
dc.subject | 電阻式記憶體 | zh_TW |
dc.subject | 常溫合成 | zh_TW |
dc.subject | Perovskite | en_US |
dc.subject | hot injection | en_US |
dc.subject | Light Emitting Diodes(LEDs) | en_US |
dc.subject | Light-emitting electrochemical cell(LEC) | en_US |
dc.subject | Resistive random-access memory(RRAM) | en_US |
dc.subject | Room-Temperature Synthesis | en_US |
dc.title | 無機鈣鈦礦電阻式記憶發光二極體光電整合元件之製作與研究 | zh_TW |
dc.title | A fabrication of optoelectronic device integration by inorganic perovskite-based RRAM and LEDs | en_US |