無機鈣鈦礦電阻式記憶發光二極體光電整合元件之製作與研究

dc.contributor李亞儒zh_TW
dc.contributorLee, Ya-Juen_US
dc.contributor.author李懿泓zh_TW
dc.contributor.authorLi, Yi-Hongen_US
dc.date.accessioned2019-09-04T01:28:12Z
dc.date.available不公開
dc.date.available2019-09-04T01:28:12Z
dc.date.issued2018
dc.description.abstract本文的研究主體:全無機CsPbX3(X = Br,I,Cl )之鈣鈦礦材料於發光二極體之發光層與元件結構之應用。針對無機鈣鈦礦薄膜材料的製程並使其發光。除此之外,使用常溫法合成無機鈣鈦礦,並縮短其製成時間。採用X光繞射儀(XRD)、電子顯微鏡(SEM)、光激發螢光光譜(PL)鑑定鈣鈦礦材料特性,進一步應用至本文多層鈣鈦礦發光元件的結構。 藉由調控鈣鈦礦陰離子的比例,發出不同波長的光,使用Ocean Optics USB4000光譜儀量測樣品電致發光光的波段,並設計鈣鈦礦電化學發光元件(LEC)與電阻式記憶體(RRAM)的結合。zh_TW
dc.description.abstractIn this study,we use hot-injection method and Room-Temperature Synthesis. The characteristics of perovskite materials were identified by X-ray diffraction (XRD), electron microscopy (SEM) and photoluminescence (PL), and further applied to the structure of multilayer perovskite light-emitting diodes. Emites different wavelengths by regulating the proportion of perovskite anions.And Integrated LEC and RRAM.en_US
dc.description.sponsorship光電科技研究所zh_TW
dc.identifierG060548040S
dc.identifier.urihttp://etds.lib.ntnu.edu.tw/cgi-bin/gs32/gsweb.cgi?o=dstdcdr&s=id=%22G060548040S%22.&%22.id.&
dc.identifier.urihttp://rportal.lib.ntnu.edu.tw:80/handle/20.500.12235/98042
dc.language中文
dc.subject鈣鈦礦zh_TW
dc.subject發光二極體zh_TW
dc.subject熱注入zh_TW
dc.subject發光電化學zh_TW
dc.subject電阻式記憶體zh_TW
dc.subject常溫合成zh_TW
dc.subjectPerovskiteen_US
dc.subjecthot injectionen_US
dc.subjectLight Emitting Diodes(LEDs)en_US
dc.subjectLight-emitting electrochemical cell(LEC)en_US
dc.subjectResistive random-access memory(RRAM)en_US
dc.subjectRoom-Temperature Synthesisen_US
dc.title無機鈣鈦礦電阻式記憶發光二極體光電整合元件之製作與研究zh_TW
dc.titleA fabrication of optoelectronic device integration by inorganic perovskite-based RRAM and LEDsen_US

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