Please use this identifier to cite or link to this item:
Title: High etching rate of GaN films by KrF excimer laser
Authors: 國立臺灣師範大學機電工程學系
Chu, Chen-Fu
Lee, C. K.
Yu, C. C.
Wang, Y. K.
Tasi, J. Y.
Yang, Chii-Rong
Wang, S. C.
Issue Date: 22-May-2001
Publisher: Elsevier
Abstract: A study of laser processing of gallium nitride (GaN) material is reported. A pulsed KrF excimer laser at 248 nm with 20-nsec pulse width and 1 Hz repetition rate is used to etch the GaN film. We establish the material etching parameters under different environmental conditions. By changing the pulsed energy at constant pulse numbers, ablation of GaN surface was observed at threshold laser fluence about 0.3 J cm−2. Laser etching increase with reducing environment pressure. At 1.0 J cm−2 laser fluence, the etching rate is about 35 nm per pulse at atmosphere pressure and increases to 60 nm per pulse at low pressure. The etched depth also increases with increasing laser fluence. The surface morphology of the etched surface was also investigated.
ISSN: 0921-5107
Other Identifiers: ntnulib_tp_E0403_01_003
Appears in Collections:教師著作

Files in This Item:
There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.