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Title: A high-efficiency, broadband and high output power pHEMT balanced K-band doubler with integrated balun
Authors: 國立臺灣師範大學應用電子科技學系
Wen-Ren Lee
Shih-Fong Chao
Zuo-Min Tsai
Pin-Cheng Huang
Chun-Hsien Lien
Jeng-Han Tsai
Huei Wang
Issue Date: 15-Dec-2006
Abstract: A high-efficiency and high output power K-band frequency doubler using InGaAs PHEMT power device is developed, which features high fundamental frequency rejection, high efficiency, good conversion gain over wide bandwidth, and high output power. A compact lumped rat-race hybrid and an output buffer amplifier are implemented on chip for a balanced design and high output power. The circuit exhibits measured conversions gain about 8 dB over the output frequencies from 12 to 22 GHz. The fundamental frequency suppression is better than 20 dB and the second harmonic saturation output power is higher than 12 dBm with a miniature chip size of 2 mm x 1 mm.
Other Identifiers: ntnulib_tp_E0611_02_025
Appears in Collections:教師著作

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