A high-efficiency, broadband and high output power pHEMT balanced K-band doubler with integrated balun

Simple item page
dc.contributor國立臺灣師範大學應用電子科技學系zh_tw
dc.contributor.authorWen-Ren Leeen_US
dc.contributor.authorShih-Fong Chaoen_US
dc.contributor.authorZuo-Min Tsaien_US
dc.contributor.authorPin-Cheng Huangen_US
dc.contributor.authorChun-Hsien Lienen_US
dc.contributor.authorJeng-Han Tsaien_US
dc.contributor.authorHuei Wangen_US
dc.date.accessioned2014-10-30T09:28:47Z
dc.date.available2014-10-30T09:28:47Z
dc.date.issued2006-12-15zh_TW
dc.description.abstractA high-efficiency and high output power K-band frequency doubler using InGaAs PHEMT power device is developed, which features high fundamental frequency rejection, high efficiency, good conversion gain over wide bandwidth, and high output power. A compact lumped rat-race hybrid and an output buffer amplifier are implemented on chip for a balanced design and high output power. The circuit exhibits measured conversions gain about 8 dB over the output frequencies from 12 to 22 GHz. The fundamental frequency suppression is better than 20 dB and the second harmonic saturation output power is higher than 12 dBm with a miniature chip size of 2 mm x 1 mm.en_US
dc.description.urihttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4429527zh_TW
dc.identifierntnulib_tp_E0611_02_025zh_TW
dc.identifier.urihttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/32284
dc.languageenzh_TW
dc.relationAsia-Pacific Microwave Conference, Yokohama,pp763 - 766 .en_US
dc.subject.otherMMICen_US
dc.subject.otherDoubleren_US
dc.subject.otherPHEMTen_US
dc.subject.otherK-banden_US
dc.subject.otherHighEfficiency.en_US
dc.titleA high-efficiency, broadband and high output power pHEMT balanced K-band doubler with integrated balunen_US

Files

Collections

教師著作