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Title: A miniature Q-band low noise amplifier using 0.13-m CMOS technology
Authors: 國立臺灣師範大學應用電子科技學系
Jeng-Han Tsai
Wei-Chien Chen
To-Po Wang
Tian-Wei Huang
Huei Wang
Issue Date: 1-Jun-2006
Publisher: IEEE Microwave Theory and Techniques Society
Abstract: A miniature Q-band low noise amplifier (LNA) using 0.13-μm standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this letter. This three-stage common source thin-film microstrip LNA achieves a peak gain of 20dB at 43GHz with a compact chip size of 0.525mm2. The 3-dB frequency bandwidth ranges from 34 to 44GHz and the minimum noise figure is 6.3dB at 41GHz. The LNA outperforms all the reported commercial standard CMOS Q-band LNAs, with the highest gain, highest output IP3, and smallest chip size.
ISSN: 1531-1309�
Other Identifiers: ntnulib_tp_E0611_01_022
Appears in Collections:教師著作

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