A miniature Q-band low noise amplifier using 0.13-m CMOS technology
| dc.contributor | 國立臺灣師範大學應用電子科技學系 | zh_tw |
| dc.contributor.author | Jeng-Han Tsai | en_US |
| dc.contributor.author | Wei-Chien Chen | en_US |
| dc.contributor.author | To-Po Wang | en_US |
| dc.contributor.author | Tian-Wei Huang | en_US |
| dc.contributor.author | Huei Wang | en_US |
| dc.date.accessioned | 2014-10-30T09:28:45Z | |
| dc.date.available | 2014-10-30T09:28:45Z | |
| dc.date.issued | 2006-06-01 | zh_TW |
| dc.description.abstract | A miniature Q-band low noise amplifier (LNA) using 0.13-μm standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this letter. This three-stage common source thin-film microstrip LNA achieves a peak gain of 20dB at 43GHz with a compact chip size of 0.525mm2. The 3-dB frequency bandwidth ranges from 34 to 44GHz and the minimum noise figure is 6.3dB at 41GHz. The LNA outperforms all the reported commercial standard CMOS Q-band LNAs, with the highest gain, highest output IP3, and smallest chip size. | en_US |
| dc.description.uri | http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=01637484 | zh_TW |
| dc.identifier | ntnulib_tp_E0611_01_022 | zh_TW |
| dc.identifier.issn | 1531-1309� | zh_TW |
| dc.identifier.uri | http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/32258 | |
| dc.language | en | zh_TW |
| dc.publisher | IEEE Microwave Theory and Techniques Society | en_US |
| dc.relation | IEEE Microwave and Wireless Components Letters, 16(6), 327-329. | en_US |
| dc.subject.other | Complementary metal-oxide-semiconductor (CMOS) | en_US |
| dc.subject.other | low noise amplifier (LNA) | en_US |
| dc.subject.other | millimeter-wave (MMW) | en_US |
| dc.subject.other | thin-film microstrip (TFMS). | en_US |
| dc.title | A miniature Q-band low noise amplifier using 0.13-m CMOS technology | en_US |