理學院

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學院概況

理學院設有數學系、物理學系、化學系、生命科學系、地球科學系、資訊工程學系6個系(均含學士、碩士及博士課程),及科學教育研究所、環境教育研究所、光電科技研究所及海洋環境科技就所4個獨立研究所,另設有生物多樣性國際研究生博士學位學程。全學院專任教師約180人,陣容十分堅強,無論師資、學術長現、社會貢獻與影響力均居全國之首。

特色

理學院位在國立臺灣師範大學分部校區內,座落於臺北市公館,佔地約10公頃,是個小而美的校園,內含國際會議廳、圖書館、實驗室、天文臺等完善設施。

理學院創院已逾六十年,在此堅固基礎上,理學院不僅在基礎科學上有豐碩的表現,更在臺灣許多研究中獨占鰲頭,曾孕育出五位中研院院士。近年來,更致力於跨領域研究,並在應用科技上加強與業界合作,院內教師每年均取得多項專利,所開發之商品廣泛應用於醫、藥、化妝品、食品加工業、農業、環保、資訊、教育產業及日常生活中。

在科學教育研究上,臺灣師大理學院之排名更高居世界第一,此外更有獨步全臺的科學教育中心,該中心就中學科學課程、科學教與學等方面從事研究與推廣服務;是全國人力最充足,設備最完善,具有良好服務品質的中心。

在理學院紮實、多元的研究基礎下,學生可依其性向、興趣做出寬廣之選擇,無論對其未來進入學術研究領域、教育界或工業界工作,均是絕佳選擇。

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Now showing 1 - 4 of 4
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    Preparation of Fluorescent Silica Nanotubes and their Application in Gene Delivery
    (Wiley-VCH Verlag, 2005-02-01) Chia-Chun Chen; Y.-C. Liu; C.-H. Wu; C.-C. Yeh; M.-T. Su; Y.-C. Wu
    Fluorescent silica nanotubes are synthesized through a sol–gel reaction using an anodic aluminum oxide membrane template. The nanotubes are filled with plasmid DNA encoding green fluorescence protein (GFP), which are incorporated into mammalian cells that subsequently express GFP (see Figure). The results demonstrate a novel application of nanotubes in biomolecule delivery.
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    Catalytic Growth and Characterization of Gallium Nitride Nanowires
    (American Chemical Society, 2001-03-28) Chia-Chun Chen; C.-C. Yeh; C.-H. Chen; M.-Y. Yu; H.-L. Liu; J.-J. Wu; K.-H. Chen; L.-C. Chen; J.-Y. Peng; Y.-F. Chen
    The preparation of high-purity and -quality gallium nitride nanowires is accomplished by a catalytic growth using gallium and ammonium. A series of catalysts and different reaction parameters were applied to systematically optimize and control the vapor−liquid−solid (VLS) growth of the nanowires. The resulting nanowires show predominantly wurtzite phase; they were up to several micrometers in length, typically with diameters of 10−50 nm. A minimum nanowire diameter of 6 nm has been achieved. Temperature dependence of photoluminescence spectra of the nanowires revealed that the emission mainly comes from wurtzite GaN with little contribution from the cubic phase. Moreover, the thermal quenching of photoluminescence was much reduced in the GaN nanowires. The Raman spectra showed five first-order phonon modes. The frequencies of these peaks were close to those of the bulk GaN, but the modes were significantly broadened, which is indicative of the phonon confinement effects associated with the nanoscale dimensions of the system. Additional Raman modes, not observed in the bulk GaN, were found in the nanowires. The field emission study showing notable emission current with low turn-on field suggests potential of the GaN nanowires in field emission applications. This work opens a wide route toward detailed studies of the fundamental properties and potential applications of semiconductor nanowires.
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    Preparation and Characterization of Carbon Nanotubes Encapsulated GaN Nanowires
    (Elsevier, 2001-09-10) Chia-Chun Chen; C.-C. Yeh; C.-H. Lang; C.-C. Lee; C.-H. Chen; M.-Y. Yu; H.-L. Liu; L.-C. Chen; Y.-S. Lin; K.-J. Ma; K.-H. Chen
    A novel two-step catalytic reaction is developed to synthesize gallium nitride nanowires encapsulated inside carbon nanotubes (GaN@CNT). The nanowires are prepared from the reaction of gallium metal and ammonium using metals or metal alloys as a catalyst. After the formation of the nanowires, carbon nanotubes are subsequently grown along the nanowires by chemical vapor deposition of methane. The structural and optical properties of pure GaN nanowires and GaN@CNT are characterized using scanning electron microscopy, transmission electron microscopy, X-ray diffraction, energy dispersive X-ray spectroscopy and Raman spectroscopy. The results show that GaN nanowires are indeed encapsulated inside carbon nanotubes. The field emission studies show that the turn-on field of GaN@CNT is higher than that of carbon nanotubes, but substantially lower than that of pure GaN nanowires. This work provides a wide route toward the preparation and applications of new one-dimensional semiconductor nanostructures.
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    Infrared and Raman-Scattering Studies in Single-Crystalline GaN Nanowires
    (Elsevier, 2001-09-14) H.-L. Liu; Chia-Chun Chen; C.-T. Chia; C.-C. Yeh; C.-H. Chen; M.-Y. Yu; S. Keller; S. P. DenBaars
    Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ∼View the MathML source is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron–phonon interaction in GaN nanowires.