Novel positive-tone thick photoresist for high aspect ratio microsystem technology

dc.contributor國立臺灣師範大學機電工程學系zh_tw
dc.contributor.authorHsieh, Gen-Wenen_US
dc.contributor.authorHsieh, Yu-Shengen_US
dc.contributor.authorYang, Chii-Rongen_US
dc.contributor.authorLee, Yu-Deren_US
dc.date.accessioned2014-10-30T09:36:15Z
dc.date.available2014-10-30T09:36:15Z
dc.date.issued2002-08-01zh_TW
dc.description.abstractA methacrylate copolymer combining chemically amplified concept and casting technique was developed as a novel thick photoresist for the UV-LIGA process. Photoresist layers up to 500 μm in thickness can be fabricated easily. Microstructures fabricated by the novel thick photoresist were demonstrated. At present, the ring-shape microstructures with 150 μm tall and 15 μm wide have been realized and the calculated aspect ratio is 10.en_US
dc.description.urihttp://www.springerlink.com/content/kcexffw3v20fuhf5/fulltext.pdfzh_TW
dc.identifierntnulib_tp_E0403_01_005zh_TW
dc.identifier.issn0946-7076zh_TW
dc.identifier.urihttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/36948
dc.languageenzh_TW
dc.publisherSpringer Verlagen_US
dc.relationMicrosystem technologies 8(4-5), 326-329.en_US
dc.relation.urihttp://dx.doi.org/10.1007/s00542-001-0158-2zh_TW
dc.titleNovel positive-tone thick photoresist for high aspect ratio microsystem technologyen_US

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