高深寬比光輔助電化學蝕刻技術應用於微光開關之研製

Abstract

本研究計畫將發展低成本之光輔助電化學蝕刻(ECE)技術，應用於具高深寬比矽微結構之製作，並利用改變光照強度與電流密度等實驗條件，達到微光機電結構之製作，以取代高成本的感應耦合電漿離子蝕刻(ICP-RIE)製程技術。由實驗的結果顯示，本研究已順利自行開發電化學蝕刻高深寬比孔洞所需之設備，並利用此設備得到最佳之製程參數，蝕刻所得結構之深寬比超過70以上，除此之外，並在蝕刻液中添加自行開發之添加劑，使孔洞側壁結構具更佳之粗糙度，其有非常顯著的效果。最後透過蝕刻時間的增加，使孔洞深度加深，使其能夠達到貫穿晶片及符合晶圓級封裝之需求。

The project will develop the technology of low-cost photo-assisted electrochemical etching (ECE) for the fabrication of silicon micro- structure with high aspect ratio. The technique will take the place of inductively coupled plasma reactive ion etching (ICP-RIE) process. For the application of micro- opto-electro-mechanical system (MOEMS). The results show we olready set up photo-assisted electro-chemical etching apparatus in this study. we also find optimal process condition with the apparatus and get over 50 aspect micro-structure. Moreover, To use an additive improve the structure roughness. After through-holes etching obtained, a wafer with conductive inter-connection will be bonded with the device wafer finally.